| Zugriffsnummer | 56265 |
| Dokumenttyp | Zeitschriftenartikel |
| Peer Review | mit Peer Review |
| Sprache | Englisch |
| Titel | Improving UV stability of SiO2/SiNx-passivated silicon photo-2 diodes through shallow junction implantation and oxide Re-3 growth |
| Autor(in); Institution |
N. Getz, Michael; SINTEF Digital, Smart Sensors and Microsystems, Oslo, NORWAY
Koybasi, Ozhan; SINTEF Digital, Smart Sensors and Microsystems, Oslo, NORWAY
Edhborg, Fredrik; RISE Research Institutes of Sweden AB, Borås, SWEDEN
Nordseth, Ørnulf; Dep. of Solar Energy Materials and Technologies, Institute for Energy Technology, Kjeller, NORWAY
Hesse, Steven; 7.3, Detektorradiometrie und Strahlungsthermometrie, PTB-Berlin
Pohl, Tobias; 7.3, Detektorradiometrie und Strahlungsthermometrie, PTB-Berlin
Povoli, Marco; SINTEF Digital, Smart Sensors and Microsystems, Oslo, NORWAY
Källberg, Stefan; RISE Research Institutes of Sweden AB, Borås, SWEDEN
Werner, Lutz; 7.3, Detektorradiometrie und Strahlungsthermometrie, PTB-Berlin
Ikonen, Erkki; Aalto University and VTT MIKES, Espoo, FINLAND
Gran, Jarle; Justervesenet, Kjeller, NORWAY
|
| Quelle/Jahr | Sensors: 26 (2026), 13, 1 - 17 |
| Artikelnummer | 3991 |
| Availability | [online only] |
| ISSN | 1424-8220 (online) |
| DOI | |
| URL | |
| Verlag | Basel: MDPI |
| Freie Schlagworte | Induced-junction photodiodes ; Ultraviolet photodiodes ; Silicon photodiodes ; SiO2/SiNx passivation ; Shallow ion implantation ; UV stability |
| Zusammenfassung | Induced-junction silicon photodiodes based on SiO2/SiNx surface passivation are attractive for high-accuracy radiometry, but their use in the deep-ultraviolet is limited by UV-induced degradation of the dielectric stack. In this work, we investigate the degradation of SiO2/SiNx -passivated p-type silicon photodiodes under UV exposure and evaluate strategies for improving stability through shallow implanted junctions and oxide processing. Capacitance–voltage measurements on MIS capacitors and lifetime measurements on symmetrically passivated wafers show that UV exposure causes a rapid reduction in effective dielectric charge and carrier lifetime, followed by saturation at higher dose. For exposure at 222 and 279 nm, the effective charge saturates at ca. 3×1011 cm-2, whereas exposure at 300 nm saturates at a higher level of ca. 7×1011 cm-2, indicating that degradation is governed by filling of a finite population of electrically active trap states. Induced-junction photodiodes exhibit rapid photocurrent loss at 222 nm and, in some cases, eventual collapse. In contrast, photodiodes with shallow implanted As or Sb junctions show an initial reduction followed by stabilization at around 80 85 % of the initial value up to the highest tested dose of 200 J/cms2. Further improvement is achieved by stripping and regrowing the screen oxide, yielding nearly unchanged photocurrent after prolonged 222 nm exposure up to ca. 500 J/cm2. These results show that UV stability can be substantially improved by reducing device dependence on dielectric-induced inversion and by improving interfacial oxide quality. |
| Kostenfreier Zugang | Open Access Gold |
| Rechteinformation | CC BY 4.0 ; Creative Commons Attribution 4.0 License |
| Förderinformationen (1) |
Förderprogramm: European Partnership on Metrology Titel der Förderung: Scale-UP Förderungsnummer: 22IEM06 |
Zitierung
N. Getz, M., Koybasi, O., Edhborg, F., Nordseth, Ø., Hesse, S., Pohl, T., Povoli, M., Källberg, S., Werner, L., Ikonen, E., & Gran, J. (2026). Improving UV stability of SiO2/SiNx-passivated silicon photo-2 diodes through shallow junction implantation and oxide Re-3 growth. Sensors, 26(13), 1–17. https://doi.org/10.3390/s26133991