| Zugriffsnummer | 55879 |
| Dokumenttyp | Konferenzartikel |
| Sprache | Englisch |
| Titel | 3D simulation of internal recombination losses of silicon chipS·CALe photodiode in UV range |
| Autor(in); Institution |
Tran, Trinh; Justervesenet JV, Kjeller, NORWAY
Werner, Lutz; 7.3, Detektorradiometrie und Strahlungsthermometrie, PTB-Berlin
Linke, Ulrike; 7.3, Detektorradiometrie und Strahlungsthermometrie, PTB-Berlin
Gran, Jarle; Justervesenet JV, Kjeller, NORWAY
|
| Quelle/Jahr | The 16th International Conference on New Developments and Applications in Optical Radiometry : Book of Abstracts:(2026), 184 - 185 |
| URL | |
| Konferenzangaben | NEWRAD 2026 - 16th International Conference on New Developments and Applications in Optical Radiometry, Seogwipo, 13-17, September, 2026, South Korea |
| Zusammenfassung | The paper presents prediction of Si photodiode responsivity in the UV range. First, 3D simulation is fitted to experiment I-V measurement of photodiode at 435 nm to extract parameter of photodiode. Simulations with the extracted parameters are performed with wavelength variation to predict responsivity of photodiode from 200 nm to 400 nm. |
| Themenbereich der Metrologie | Photometrie und Radiometrie |
| Innovationscluster | Quantentechnologie |
| Geschäftsfelder | Grundlagen der Metrologie |
| Förderinformationen (1) |
Förderername: European Partnership on Metrology
Förderprogramm: Scale-UP Förderungsnummer: 22IEM06 |
Zitierung
Tran, T., Werner, L., Linke, U., & Gran, J. (2026). 3D simulation of internal recombination losses of silicon chipS·CALe photodiode in UV range. NEWRAD 2026 - 16th International Conference on New Developments and Applications in Optical Radiometry, Seogwipo, 13-17, September, 2026, South Korea.