| Zugriffsnummer | 55211 |
| Dokumenttyp | Konferenzartikel |
| Peer Review | mit Peer Review |
| Sprache | Englisch |
| Titel | Fabrication of ultra-shallow EUV gratings in silicon via ion irradiation |
| Autor(in); Institution |
Kaufmann, Johannes; Friedrich-Schiller-Universität, Jena, GERMANY
Freiberg, Katharina; Friedrich-Schiller-Universität, Jena, GERMANY
Walther, Markus; Friedrich-Schiller-Universität, Jena, GERMANY
Fernández Herrero, Analía; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Lippmann, Stephanie; Friedrich-Schiller-Universität, Jena, GERMANY
Siefke, Thomas; Friedrich-Schiller-Universität, Jena, GERMANY; Fraunhofer-Institut für Angewandte Optik und Feinmechanik, GERMANY
|
| Quelle/Jahr | Advances in X-Ray/EUV Sources, Optics, and Components XX: 13620 (2025), 136200l-1 - 136200l-6 |
| Artikelnummer | 136200l |
| Schriftenreihe | Proceedings of SPIE: 136200 |
| Herausgeber(in) |
Khounsary, Ali M.
Mimura, Hidekazu
|
| ISBN | 978-1-5106-9148-3 |
| DOI | |
| Verlag | Bellingham, Wash.: SPIE |
| Konferenzangaben | Optics + Photonics 2025, San Diego, Calif., 3-7, August, 2025, United States |
| Freie Schlagworte | Ion irradiation ; Ions ; Fabrication ; Silicon ; Extreme ultraviolet ; Diffraction gratings ; Blazed gratings ; Ion beams ; Etching ; Nitrogen ; Nanofabrication |
| Zusammenfassung | Operation of diffraction gratings at near-normal incidence in the extreme ultra violet range (EUV) requires ultra-shallow gratings. These are extremely challenging to produce via conventional dry etching techniques. As alternative, the approach presented here utilizes swelling caused by ion irradiation to fabricate ulta-shallow gratings. To increase the processing speed by at least one order of magnitude in comparison to direct write processes with focussed ion beams, we utilize a broad ion source which can structure areas in the range of tens of square-cm via irradiation through a mask of photoresist. Here, we focus on the irradiation of crystalline silicon with molecular nitrogen ions with an energy of 40 keV. By utilizing a variation in the conical angle of irradiation we fabricated structures with heights ranging from 1.7 nm to 5.5 nm, while maintaining stable source and irradiation conditions, highlighting a parameter for the tailoring of processing times. Next to that, a variation of non-conical angle of irradiation paths the way towards a fabrication of arbitrary gratings shapes. In combination, this enhances the control of structure height and shape in the angstrom range, which is highly relevant to applications in the EUV. |
| Themenbereich der Metrologie | Photometrie und Radiometrie |
Zitierung
Kaufmann, J., Ciesielski, R., Freiberg, K., Walther, M., Fernández Herrero, A., Lippmann, S., Soltwisch, V., Siefke, T., & Zeitner, U. (2025). Fabrication of ultra-shallow EUV gratings in silicon via ion irradiation. Optics + Photonics 2025, San Diego, Calif., 3-7, August, 2025, United States. https://doi.org/10.1117/12.3061518