| Zugriffsnummer | 54520 |
| Dokumenttyp | Konferenzartikel |
| Peer Review | mit Peer Review |
| Sprache | Englisch |
| Titel | Ultra shallow silicon EUV gratings fabricated via ion irradiation |
| Autor(in); Institution |
Kaufmann, Johannes; Friedrich-Schiller-Universität, Jena, GERMANY
Freiberg, Katharina; Friedrich-Schiller-Universität, Jena, GERMANY
Walther, Markus; Friedrich-Schiller-Universität, Jena, GERMANY
Fernández Herrero, Analía; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Lippmann, Stephanie; Friedrich-Schiller-Universität, Jena, GERMANY
Siefke, Thomas; Friedrich-Schiller-Universität, Jena, GERMANY; Fraunhofer-Institut für Angewandte Optik und Feinmechanik, GERMANY
|
| Quelle/Jahr | EUV and X-ray Optics: Synergy between Laboratory and Space IX:(2025), 135310L-1 - 135310L-6 |
| Artikelnummer | 135310L |
| Schriftenreihe | Proceedings of SPIE: 13531 |
| DOI | |
| Verlag | Bellingham, Wash.: SPIE |
| Konferenzangaben | SPIE Optics + Optoelectronics, Prague, 7-11, April, 2025, Czech Republic |
| Freie Schlagworte | Ions ; Ion irradiation ; Fabrication ; Silicon ; Extreme ultraviolet ; Etching ; Aluminum oxide ; Nitrogen ; Point spread functions |
| Zusammenfassung | Diffraction gratings operating at near-normal incidence in the extreme ultraviolet range (EUV) require structure heights that are extremely challenging to produce via conventional etching techniques. Here, we present an alternative fabrication approach utilizing swelling caused by ion irradiation. Fast processing speeds on scales of tens of square cm are enabled by a broad ion beam in combination with a photoresist mask. By utilizing this process with molecular nitrogen ions with an energy of 40 keV we show the fabrication of binary lamellar gratings with pitches in the range of 400 nm to 2 μm. Realised structure heights range from 1.7 nm to 20 nm, which is relevant to applications in the EUV. An investigation of technological challenges gives insight into parameters necessary for a control of structure height with accuracy in the angstrom range. |
| Themenbereich der Metrologie | Photometrie und Radiometrie |
Zitierung
Kaufmann, J., Ciesielski, R., Freiberg, K., Walther, M., Fernández Herrero, A., Lippmann, S., Soltwisch, V., Siefke, T., & Zeitner, U. (2025). Ultra shallow silicon EUV gratings fabricated via ion irradiation. SPIE Optics + Optoelectronics, Prague, 7-11, April, 2025, Czech Republic. https://doi.org/10.1117/12.3055797