Zugriffsnummer 52883
Dokumenttyp Konferenzartikel
Sprache Englisch
Titel Quantum Hall resistance standards based on epitaxial Graphene with different doping layer sequence
Autor(in); Institution
Yin, Yefei; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Kruskopf, Mattias; 2.6, Elektrische Quantenmetrologie, PTB-Braunschweig
Chatterjee, Atasi; 2.6, Elektrische Quantenmetrologie, PTB-Braunschweig
Bauer, Stephan; 2.6, Elektrische Quantenmetrologie, PTB-Braunschweig
Tschirner, Teresa; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Götz, Martin; 2.1, Gleichstrom und Niederfrequenz, PTB-Braunschweig
Hohls, Frank; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Pierz, Klaus; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Schumacher, Hans Werner; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Quelle/Jahr 2024 Conference on Precision Electromagnetic Measurements (CPEM):(2024)
ISSN 2160-0171 (online) ; 0589-1485 (PoD)
ISBN 979-8-3503-6104-9 (online) ; 979-8-3503-6105-6 (PoD)
Verlag Piscataway, NJ: IEEE
Konferenzangaben Conference on Precision Electromagnetic Measurements CPEM 2024, Denver, Colo., 08-12, July, 2024, USA
Freie Schlagworte Resistance standards ; epitaxial graphene ; quantum Hall effect ; metrology
Zusammenfassung Epitaxial graphene-based quantum Hall resistance standards (QHRS) can be operated at relaxed working conditions compared to conventional GaAs heterostructure devices. To reach the desired magnetic field working point, exact and reliable control of the charge carrier density of graphene plays a crucial role. This can be achieved by post-growth deposition of F4-TCNQ molecular dopants embedded within a polymer host layer. Here, we investigate QHRS with different sequences of such doping and undoped spacer layers to find a structure that is as simple and optimal as possible. By high-accuracy resistance measurements we found excellent metrological quality for all types of devices in a broad magnetic field range starting at 5 T and at 4.2 K. The resistance quantization is maintained over two years, so far, which gives further confidence in the robustness and long-term stability of such molecular-doped graphene-based QHRS.
Themenbereich der Metrologie Elektrizität und Magnetismus
Forschungsprojekt Deutsche Forschungsgemeinschaft (DFG) Projects No. Pi385/3-1 within the FOR5242 research unit (FV-25034), DFG Germany’s Excellence Strategy–EXC-2123 QuantumFrontiers-No. 390837967.
Förderinformationen (1) Förderername: Deutsche Forschungsgemeinschaft (DFG)
Förderer ID: 0000 0001 2096 9829
Förderer ID Typ: ISNI
Förderprogramm: Pi385/3-1 within the FOR5242 research unit (FV-25034), DFG Germany's Excellence Strategy-EXC-2123 QuantumFrontiers
Förderungsnummer: 390837967

Zitierung

Yin, Y., Kruskopf, M., Chatterjee, A., Bauer, S., Tschirner, T., Götz, M., Hohls, F., Pierz, K., & Schumacher, H. W. (2024). Quantum Hall resistance standards based on epitaxial Graphene with different doping layer sequence. Conference on Precision Electromagnetic Measurements CPEM 2024, Denver, Colo., 08-12, July, 2024, USA.

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