Zugriffsnummer 50987
Dokumenttyp Konferenzartikel
Peer Review unbekannt
Sprache Englisch
Titel D-band characterization of a commercial high-resistivity Silicon calibration substrate
Autor(in); Institution
Phung, Gia Ngoc; 2.2, Hochfrequenz und Felder, PTB-Braunschweig
Koo, Hyunji; Korea Research Institute of Standards and Science (KRISS), Electromagnetic Wave Metrology Group, Daejeon, SOUTH KOREA
Cho, Chihyun; Korea Research Institute of Standards and Science (KRISS), Electromagnetic Wave Metrology Group, Daejeon, SOUTH KOREA
Kwon, Jae-Yong; Korea Research Institute of Standards and Science (KRISS), Electromagnetic Wave Metrology Group, Daejeon, SOUTH KOREA
Arz, Uwe; 2.2, Hochfrequenz und Felder, PTB-Braunschweig
Quelle/Jahr 2023 101st ARFTG Microwave Measurement Conference (ARFTG):(2023), 40 - 43
ISSN 2767-8776 ; 2836-1407 (PoD)
ISBN 979-8-3503-2345-0 ; 979-8-3503-2346-7 (PoD)
DOI
Verlag Piscataway, NJ: IEEE
Konferenzangaben 2023 101st ARFTG Microwave Measurement Conference (ARFTG), San Diego, 16, June, 2023, USA
Freie Schlagworte coplanar waveguides ; calibration ; on-wafer measurements ; probes ; standards
Zusammenfassung Silicon (Si) is one of the most important materials used in many RF applications. On-wafer characterization of Si-based devices, components and circuits is widely adopted. Recent investigations have been devoted to the study of parasitic probe and neighborhood effects in commercial alumina-based calibration substrates. However, these parasitic effects have not been thoroughly investigated for commercial silicon-based calibration substrates. Therefore, this paper presents a detailed study of a commercial high-resistivity silicon (HRSi) calibration substrate. The neighborhood effect in conjunction with probe influences is investigated up to D-band frequencies.
Themenbereich der Metrologie Elektrizität und Magnetismus
Forschungsprojekt 20IND03: FutureCom: RF Measurements for future communications applications
Förderinformationen (1) Förderername: European Commission (EC)
Förderer ID: 0000 0001 2242 8989
Förderer ID Typ: ISNI
Förderprogramm: EMPIR 2020 Industry
Titel der Förderung: 20IND03: FutureCom: RF Measurements for future communications applications
Förderungsnummer: 20IND03

Zitierung

Phung, G. N., Koo, H., Cho, C., Kwon, J.-Y., & Arz, U. (2023). D-band characterization of a commercial high-resistivity Silicon calibration substrate. 2023 101st ARFTG Microwave Measurement Conference (ARFTG), San Diego, 16, June, 2023, USA. https://doi.org/10.1109/ARFTG57476.2023.10279693

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