| Zugriffsnummer | 49099 |
| Dokumenttyp | Zeitschriftenartikel |
| Peer Review | mit Peer Review |
| Sprache | Englisch |
| Titel | Tailoring permanent charge carrier densities in epitaxial Graphene on SiC by functionalization with F4-TCNQ |
| Autor(in); Institution |
Yin, Yefei; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Chatterjee, Atasi; 2.6, Elektrische Quantenmetrologie, PTB-Braunschweig
Momeni, Davood; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Götz, Martin; 2.6, Elektrische Quantenmetrologie, PTB-Braunschweig
Wundrack, Stefan; 3.1, Allgemeine und Anorganische Chemie, PTB-Braunschweig
Hohls, Frank; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Pierz, Klaus; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Schumacher, Hans Werner; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
|
| Quelle/Jahr | Advanced Physics Research: 1 (2022), 1, 1 - 12 |
| Artikelnummer | 2200015 |
| Availability | [online only] |
| ISSN | 2751-1200 (ONLINE) |
| DOI | |
| Verlag | Weinheim: Wiley-VCH GmbH |
| Freie Schlagworte | epitaxial graphene ; quantum resistance metrology ; molecular doping ; molecular doping ; quantum resistance standard |
| Zusammenfassung | The outstanding properties and the potential for large-scale fabrication open a wide field for electronic applications of epitaxial graphene on silicon carbide substrates. However, reliable doping methods to permanently control and tailor the carrier concentration to the desired value without applying an electrostatic gate are challenging and still under investigation. In this study, a post-growth molecular doping technique is investigated that compensates for the high electron density of pristine epitaxial graphene by using the acceptor F4-TCNQ. By precise adjustment of the dopant concentration, the carrier density can be tuned in a wide range from intrinsic n- to the p-type regime. The fabricated quantum Hall devices are ready-to-use, and no further treatments are required. High-precision resistance measurements of graphene-based devices with different doping levels show a quantization accuracy of 10−9 that underlines the high quality of the fabricated devices and the suitability of this method for device applications. The experimentally observed correlation between the carrier density and the onset of the quantum Hall plateau gives a reliable criterion for the choice of devices in quantum resistance metrology. |
| Kostenfreier Zugang | Open Access Gold |
| Rechteinformation | CC BY 4.0 ; Creative Commons Attribution 4.0 License |
| Themenbereich der Metrologie | Elektrizität und Magnetismus |
| Forschungsprojekt | Joint Research Project, 18SIB07, GIQS, European Unions’ Horizon 2020 research and innovation programme. Deutsche Forschungsgemeinschaft Research Unit. Grant Number: FOR524. Deutsche Forschungsgemeinschaft. Grant Number: EXC-2123-QuantumFrontiers–390837967 |
| Förderinformationen (1) |
Förderername: European Commission (EC)
Förderer ID: 0000 0001 2242 8989 Förderer ID Typ: ISNI Förderprogramm: EMPIR 2018 SI Broader Scope Titel der Förderung: 18SIB07: GIQS: Graphene impedance quantum standard Förderungsnummer: 18SIB07 |
| Förderinformationen (2) |
Förderername: Deutsche Forschungsgemeinschaft (DFG)
Förderer ID: 0000 0001 2096 9829 Förderer ID Typ: ISNI Förderprogramm: FOR524 Titel der Förderung: EXC-2123-QuantumFrontiers Förderungsnummer: 390837967 |
Zitierung
Yin, Y., Chatterjee, A., Momeni, D., Kruskopf, M., Götz, M., Wundrack, S., Hohls, F., Pierz, K., & Schumacher, H. W. (2022). Tailoring permanent charge carrier densities in epitaxial Graphene on SiC by functionalization with F4-TCNQ. Advanced Physics Research, 1(1), 1–12. https://doi.org/10.1002/apxr.202200015