| Zugriffsnummer | 49006 |
| Dokumenttyp | Zeitschriftenartikel |
| Peer Review | mit Peer Review |
| Sprache | Englisch |
| Titel | Impact of polymer assisted epitaxial graphene growth on various types of SiC substrates |
| Autor(in); Institution |
Chatterjee, Atasi; 2.6, Elektrische Quantenmetrologie, PTB-Braunschweig
Kruskopf, Mattias; 2.6, Elektrische Quantenmetrologie, PTB-Braunschweig
Wundrack, Stefan; 3.1, Allgemeine und Anorganische Chemie, PTB-Braunschweig
Hinze, Peter; 2.4, Quantenelektronik, PTB-Braunschweig
Pierz, Klaus; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Stosch, Rainer; 3.1, Allgemeine und Anorganische Chemie, PTB-Braunschweig
Scherer, Hansjörg; 2.6, Elektrische Quantenmetrologie, PTB-Braunschweig
|
| Quelle/Jahr | ACS Applied Electronic Materials: 4 (2022), 11, 5317 - 5325 |
| Availability | [online only] |
| ISSN | 2637-6113 (ONLINE) |
| DOI | |
| Verlag | ACS |
| Freie Schlagworte | epitaxial graphene ; polymer-assisted growth ; spin-on deposition ; miscut angle ; SiC ; concentration dependent |
| Zusammenfassung | The growth parameters for epitaxial growth of graphene on silicon carbide (SiC) have been in research focus over the past years. However, besides the standard growth parameters, the influence of the substrate pre-treatment and properties of the underlying SiC wafer are critical parameters for optimizing the quality of monolayer graphene on SiC. In this systematic study, we show how the surface properties and the pre-treatment determine the quality of monolayer graphene using polymer-assisted sublimation growth (PASG) on SiC. Using the spin-on deposition technique of PASG, several polymer concentrations have been investigated to understand the influence of the polymer content on the final monolayer coverage using wafers of different miscut angles and different polytypes. Confocal laser scanning microscopy (CLSM), atomic force microscopy (AFM), Raman spectroscopy, and scanning electron microscopy (SEM) were used to characterize these films. The results show that, even for SiC substrates with high miscut angles, high-quality graphene is obtained when an appropriate polymer concentration is applied. This is in excellent agreement with the model understanding that an insufficient carbon supply from SiC step edge decomposition can be compensated by additionally providing carbon from a polymer source. The described methods make the PASG spin-on deposition technique more convenient for commercial use. |
| Kostenfreier Zugang | Open Access Hybrid |
| Rechteinformation | CC BY 4.0 ; Creative Commons Attribution 4.0 License |
| Themenbereich der Metrologie | Elektrizität und Magnetismus |
| Forschungsprojekt | GIQS JRP 18SIB07 |
| Förderinformationen (1) |
Förderername: European Commission (EC)
Förderer ID: 0000 0001 2242 8989 Förderer ID Typ: ISNI Titel der Förderung: 18SIB07: GIQS: Graphene impedance quantum standard Förderungsnummer: 18SIB07 |
| Förderinformationen (2) |
Förderername: Deutsche Forschungsgemeinschaft (DFG)
Förderer ID: 0000 0001 2096 9829 Förderer ID Typ: ISNI Förderprogramm: FOR524 |
Zitierung
Chatterjee, A., Kruskopf, M., Wundrack, S., Hinze, P., Pierz, K., Stosch, R., & Scherer, H. (2022). Impact of polymer assisted epitaxial graphene growth on various types of SiC substrates. ACS Applied Electronic Materials, 4(11), 5317–5325. https://doi.org/10.1021/acsaelm.2c00989