| Zugriffsnummer | 48871 |
| Dokumenttyp | Konferenzartikel |
| Peer Review | unbekannt |
| Sprache | Englisch |
| Titel | Optical stability investigation of high-performance Silicon-based VUV photodiodes |
| Autor(in); Institution |
Shi, L.; Delft University of Technology, Delft, THE NETHERLANDS
Nanver, L.K.; Delft University of Technology, Delft, THE NETHERLANDS
Sakic, A; Delft University of Technology, Delft, THE NETHERLANDS
Gottwald, Alexander; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Kroth, Udo; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
|
| Quelle/Jahr | SENSORS 2010 IEEE:(2010), 132 - 135 |
| ISSN | 1930-0395 |
| ISBN | 978-1-4244-8170-5 (PRINT) ; 978-1-4244-8168-2 (ONLINE) |
| URL | |
| Verlag | IEEE Xplore |
| Konferenzangaben | IEEE Sensors Conference 2010, Waikoloa, November 1-4, 2010, USA |
| Zusammenfassung | Silicon p + n photodiodes fabricated by a pure boron deposition technology are evaluated for detection in the Vacuum Ultra-Violet (VUV) spectral range from 115 nm to 215 nm wavelengths, where the attenuation length in silicon is only a few nanometers. It is demonstrated that the junctions formed by the B-layer process are so ultrashallow that the photodiodes are able to provide a very good sensitivity, in the order of 0.1 A/W, in the whole VUV range. Moreover, the demonstrated stability also appears to be very good if isolating layers on the diode surface are avoided. |
| Themenbereich der Metrologie | Photometrie und Radiometrie |