| Zugriffsnummer | 48867 |
| Dokumenttyp | Konferenzartikel |
| Peer Review | unbekannt |
| Sprache | Englisch |
| Titel | Electrical performance optimization of a silicon-based EUV photodiode with near-theoretical quantum efficiency |
| Autor(in); Institution |
Shi, L.; Delft University of Technology, Delft, THE NETHERLANDS
Nanver, L. K.; Delft University of Technology, Delft, THE NETHERLANDS
Laubis, Christian; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Scholze, Frank; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Nihtianov, S.; Delft University of Technology, Delft, THE NETHERLANDS
|
| Quelle/Jahr | 16th International Solid-State Sensors, Actuators and Microsystems Conference 2011, (TRANSDUCERS 2011): Beijing, China, 5 - 9 June:(2011), 48 - 51 |
| ISBN | 978-1-4577-0156-6 (ONLINE) ; 978-1-4577-0157-3 (PRINT) |
| URL | |
| Verlag | Piscataway, NJ: IEEE |
| Konferenzangaben | 16th International Solid-State Sensors, Actuators and Microsystems Conference - China, National Convention Center, Beijing, China, Beijing, 05-09, June, 2011, China |
| Freie Schlagworte | Extreme-Ultraviolet ; photodiode ; ultrashallow junctions ; responsivity ; dark current ; series resistance ; response time |
| Zusammenfassung | Ultrashallow Si p+n photodiodes fabricated in a pureboron chemical-vapor-deposition (CVD) technology are investigated with respect to the relation between sensitivity to extreme-ultraviolet light and electrical performance (dark current and response time). The photodiodes are covered with a boron layer (B-layer diodes) which can be nanometer thin, allowing a quantum efficiency close to the theoretical maximum in the EUV spectral range. The experimental results presented here show that, by modifying the diode structure, both reproducible low dark current and short response time can be realized without any significant drop of the EUV sensitivity. |
| Themenbereich der Metrologie | Photometrie und Radiometrie |
Zitierung
Shi, L., Nanver, L. K., Laubis, C., Scholze, F., & Nihtianov, S. (2011). Electrical performance optimization of a silicon-based EUV photodiode with near-theoretical quantum efficiency. 16th International Solid-State Sensors, Actuators and Microsystems Conference - China, National Convention Center, Beijing, China, Beijing, 05-09, June, 2011, China.