| Zugriffsnummer | 48441 |
| Dokumenttyp | Konferenzartikel |
| Peer Review | mit Peer Review |
| Sprache | Englisch |
| Titel | Simulation of polychromatic effects in high NA EUV lithography |
| Autor(in); Institution |
Erdmann, Andreas; Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB, Erlangen, GERMANY
Mesilhy, Hazem; Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB, Erlangen, GERMANY
Evanschitzky, Peter; Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB, Erlangen, GERMANY
Saadeh, Qais; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Bihr, Simon; Carl Zeiss SMT GmbH, Jena, GERMANY
Zimmermann, Jörg; Carl Zeiss SMT GmbH, Jena, GERMANY
Philipsen, Vicky; imec, BELGIUM
|
| Quelle/Jahr | International Conference on Extreme Ultraviolet Lithography 2021:(2021), 13 S. |
| Artikelnummer | 1185405 |
| Schriftenreihe | Proceedings of SPIE: 118954 |
| Herausgeber(in) |
Ronse, Kurt G.
Naulleau, Patrick P.
Gargini, Paolo A.
Itani, Toshiro
Hendrickx, Eric
|
| ISSN | 0277-786X ; 1996-756X |
| ISBN | 978-1-5106-4552-3 (PRINT) ; 978-1-5106-4553-0 (ONLINE) |
| DOI | |
| Verlag | Bellingham, Wash.: SPIE |
| Konferenzangaben | SPIE Photomask Technology + EUV Lithography, Virtual Conference, 12, Oktober, 2021 |
| Freie Schlagworte | Photomasks ; Mirrors ; Extreme ultraviolet ; Diffraction ; Reflectivity ; Extreme ultraviolet lithography ; Lithography ; Imaging systems ; Phase shifts |
| Zusammenfassung | State-of-the-art EUV exposure systems utilize EUV radiation around 13.52 nm with a full band spectrum extending from 13.2 nm to 13.8 nm. The variation of the wavelength in this range modifies the diffraction angles with an impact on the image blur and non-telecentricity effects. Dispersion of the materials on the EUV mirrors and on the 3D mask introduce an additional sensitivity of the imaging characteristics to the exposure wavelength. We employed the simulation models of the Fraunhofer IISB lithography simulator Dr.LiTHO in combination with measured optical material data from PTB to quantify the resulting image impact and to differentiate between the identified contributors to polychromatic imaging effects. |
| Themenbereich der Metrologie | Photometrie und Radiometrie |
Zitierung
Erdmann, A., Mesilhy, H., Evanschitzky, P., Saadeh, Q., Soltwisch, V., Bihr, S., Zimmermann, J., & Philipsen, V. (2021). Simulation of polychromatic effects in high NA EUV lithography. SPIE Photomask Technology + EUV Lithography, Virtual Conference, 12, Oktober, 2021. https://doi.org/10.1117/12.2600931