| Zugriffsnummer | 47994 |
| Dokumenttyp | Zeitschriftenartikel |
| Peer Review | unbekannt |
| Sprache | Englisch |
| Titel | Two-step photoconductivity by dislocations in silicon |
| Autor(in); Institution |
Kos, Hans-Jörg; PTB-Berlin
Neubert, Dietrich; 9.41, Halbleiter, PTB-Berlin
|
| Quelle/Jahr | Physica Status Solidi A: 44 (1977), 1, 259 - 264 |
| ISSN | 0031-8965 |
| DOI | |
| Verlag | Berlin: Wiley-VCH |
| Zusammenfassung | The spectral photoconductivity of plastically deformed n- and p-doped silicon shows in the temperature region between 95 and 220 K two distinct threshold energies E1 and E2 independent on doping. At E1 = 0.52 eV there is an increase and at E2 = 0.80 eV a decrease of photoconductivity in comparison with undeformed silicon. The first transition is ascribed to an excitation of electrons of the valence band to empty states at the top of a dislocation band centred around 0.4 eV above the valence band and the second transition by an excitation of electrons from the bottom of the same dislocation band to the conduction band. |
