| Zugriffsnummer | 47748 |
| Dokumenttyp | Zeitschriftenartikel |
| Peer Review | unbekannt |
| Sprache | Englisch |
| Titel | Spin dependent recombination at dislocations in silicon |
| Autor(in); Institution |
Neubert, Dietrich; 9.41, Halbleiter, PTB-Berlin
Hoffmann, K.; 9.4, Festkörperphysik, PTB-Berlin
Teichmann, H.; PTB-Berlin
Schlief, Reinhard; 9.41, Halbleiter, PTB-Berlin
|
| Quelle/Jahr | Solid-State Electronics: 21 (1978), 11-12, 1445 - 1450 |
| ISSN | 0038-1101 (PRINT) ; 1879-2405 (ONLINE) |
| DOI | |
| Verlag | Amsterdam: Elsevier |
| Zusammenfassung | The unpaired electrons of dislocations with an edge component in Si give rise to an EPR signal. Under the resonant condition, a decrease of photoconductivity is observed. We have observed the derivative of the resonant signal at a microwave frequency of 9.2 GHz by modulating the sweeping magnetic field. The relaxation time of the spin system was studied by varying the modulation frequency. The amplitude of the resonant signal is discussed with respect to dependence of the background signal on the sweeping magnetic field. The signal consists of more than one absorption line and has been resolved into its components by computer evaluation. The energy level structure of the dislocations which produce the signal has been derived from Hall effect measurements and conventional optical methods. The influence of deformation temperature and the role of other heat treatment produced defects as a possible source of the signal are discussed. |
