| Zugriffsnummer | 47285 |
| Dokumenttyp | Zeitschriftenartikel |
| Peer Review | mit Peer Review |
| Sprache | Englisch |
| Titel | Unraveling the origin of local variations in the step resistance of epitaxial graphene on SiC: a quantitative scanning tunneling potentiometry study |
| Autor(in); Institution |
Sinterhauf, Anna; Georg-August-Universität Göttingen, IV. Physikalisches Institut, Göttingen, GERMANY
Träger, Georg A.; Georg-August-Universität Göttingen, IV. Physikalisches Institut, Göttingen, GERMANY
Momeni, Davood; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Pierz, Klaus; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Schumacher, Hans Werner; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Wenderoth, Martin; Georg-August-Universität Göttingen, IV. Physikalisches Institut, Göttingen, GERMANY
|
| Quelle/Jahr | Carbon: 184 (2021), 463 - 469 |
| ISSN | 0008-6223 (PRINT) ; 1873-3891 (ONLINE) |
| DOI | |
| Verlag | Amsterdam: Elsevier |
| Freie Schlagworte | graphene ; epitaxial graphene ; step resistance ; scanning tunneling potentiometry ; STP |
| Zusammenfassung | By combining highly resolved Scanning Tunneling Potentiometry with the exceptional sample homo- geneity of graphene on SiC epitaxially grown by polymer-assisted sublimation growth, we reveal local variations in the resistance associated with substrate steps. We quantify these variations and show that they are an intrinsic property of graphene on SiC. Furthermore, we trace back their origin to variations in the electronic structure of the interface and, thereby, demonstrate the crucial impact of intrinsic prox- imity effects in graphene on SiC. Moreover, we find a correlation of the step resistance with the local conductivity and show that at room temperature, the step resistance decreases with increasing local conductivity, whereas at low temperatures, it increases with increasing local conductivity. We attribute this inversion to an interplay between the reduction in electron-phonon scattering and potential scat- tering with decreasing temperature, and the efficiency of the built-up of an almost completely charge carrier depleted zone at the position of the substrate step. |
| Kostenfreier Zugang | Open Access Hybrid |
| Rechteinformation | CC BY 4.0 ; Creative Commons Attribution 4.0 License |
| Themenbereich der Metrologie | Elektrizität und Magnetismus |
Zitierung
Sinterhauf, A., Träger, G. A., Momeni, D., Pierz, K., Schumacher, H. W., & Wenderoth, M. (2021). Unraveling the origin of local variations in the step resistance of epitaxial graphene on SiC: a quantitative scanning tunneling potentiometry study. Carbon, 184, 463–469. https://doi.org/10.1016/j.carbon.2021.08.050