Zugriffsnummer 46359
Dokumenttyp Konferenzartikel Freier Zugang
Peer Review unbekannt
Sprache Englisch
Titel Quantum yield in induced junction silicon photodiodes at wavelengths around 400 nm
Autor(in); Institution
Werner, Lutz; 7.3, Detektorradiometrie und Strahlungsthermometrie, PTB-Berlin
Linke, Ulrike; 7.3, Detektorradiometrie und Strahlungsthermometrie, PTB-Berlin
Müller, Ingmar; 7.3, Detektorradiometrie und Strahlungsthermometrie, PTB-Berlin
Kübarsepp, Toomas; Metrosert, Tallinn, ESTONIA
Sildoja, Meelis-Mait; Metrosert, Tallinn, ESTONIA
Tran, Trinh; Justervesenet, Kjeller, NORWAY
Gran, Jarle; Justervesenet, Kjeller, NORWAY
Quelle/Jahr NEWRAD 2021 conference proceedings:(2021), 255 - 256
Availability [online only]
Herausgeber(in)
Korpusenko, Mikhail
URL
Konferenzangaben 14th International Conference on New Developments and Applications in Optical Radiometry (NEWRAD 2021), Virtual Conference, 21-24, June, 2021
Zusammenfassung The quantum yield in induced junction photodiodes has been measured. The results show that the quantum yield can be larger than unity at wavelengths longer than 400 nm. This observation has to be considered when applying spectral responsivity models which usually assume a quantum yield of exactly unity.
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Rechteinformation CC BY 4.0 ; Creative Commons Attribution 4.0 License

Zitierung

Werner, L., Linke, U., Müller, I., Kübarsepp, T., Sildoja, M.-M., Tran, T., & Gran, J. (2021). Quantum yield in induced junction silicon photodiodes at wavelengths around 400 nm. 14th International Conference on New Developments and Applications in Optical Radiometry (NEWRAD 2021), Virtual Conference, 21-24, June, 2021.

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