| Zugriffsnummer | 45931 |
| Dokumenttyp | Zeitschriftenartikel |
| Peer Review | mit Peer Review |
| Sprache | Englisch |
| Titel | Characterization of Ru4-xTax (x=1,2,3) alloy as material candidate for EUV low-n mask |
| Autor(in); Institution |
Wu, Meiyi; IMEC, Leuven, BELGIUM
de Marneffe, Jean-François; IMEC, Leuven, BELGIUM
Opsomer, Karl; IMEC, Leuven, BELGIUM
Detavernier, Christophe; Ghent University, Department of Solid State Sciences, Ghent, BELGIUM
Delabie, Annelies; IMEC, Leuven, BELGIUM
Naujok, Philipp; optiX fab GmbH, Jena, GERMANY
Caner, Ozge; IMEC, Leuven, BELGIUM
Goodyear, Andy; Oxford Instruments Plasma Technology, Bristol, UK
Cooke, Mike; Oxford Instruments Plasma Technology, Bristol, UK
Saadeh, Qais; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Soltwisch, Victor; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Scholze, Frank; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Philipsen, Vicky; IMEC, Leuven, BELGIUM
|
| Quelle/Jahr | Micro and Nano Engineering: 12 (2021), 9 S. |
| Artikelnummer | 100089 |
| Availability | [online only] |
| ISSN | 2590-0072 |
| DOI | |
| Verlag | Amsterdam: Elsevier |
| Freie Schlagworte | EUV lithography ; EUV mask absorber ; Alloy absorber for EUV mask ; RuTa alloy ; Material optical properties refractive index ; Mask absorber etching ; Mask absorber characterization |
| Zusammenfassung | Ru4-xTax (x = 1,2,3) alloys are studied as absorber candidates for EUV low-n mask. We report the morphology, surface roughness as well as the chemical composition of the as-deposited alloy films for better theoretical model building of the EUVL absorber stack. Their refractive indices are reconstructed by optimizing measured EUV reflectivity data for the purpose of enabling rigorous EUVL imaging calculations in the future work. The stabilities (both physical and chemical) of these absorber candidates are verified which contribute to a long lifetime of the mask in its working environment. This includes the resistance assessments of the thin films against high temperature up to 500 °C, different mask cleaning solutions and hydrogen environment which is present in EUV scanners. Etching of RuTa is explored using halogen-based reactive ion etch technique. A low etch rate is obtained with a moderate etch selectivity to Ru, which is the capping layer of multilayer mirror on a EUVL mask. |
| Kostenfreier Zugang | Open Access Gold |
| Rechteinformation | CC BY-NC-ND 4.0 ; Creative Commons Attribution NonCommercial NoDerivatives 4.0 License |
| Themenbereich der Metrologie | Photometrie und Radiometrie |
Zitierung
Wu, M., de Marneffe, J.-F., Opsomer, K., Detavernier, C., Delabie, A., Naujok, P., Caner, O., Goodyear, A., Cooke, M., Saadeh, Q., Soltwisch, V., Scholze, F., & Philipsen, V. (2021). Characterization of Ru4-xTax (x=1,2,3) alloy as material candidate for EUV low-n mask. Micro and Nano Engineering, 12, 9 S. https://doi.org/10.1016/j.mne.2021.100089