| Zugriffsnummer | 45552 |
| Dokumenttyp | Zeitschriftenartikel |
| Peer Review | mit Peer Review |
| Sprache | Englisch |
| Titel | Refined extreme ultraviolet mask stack model |
| Autor(in); Institution |
Makhotkin, I. A.; IMEC, Leuven, BELGIUM
Wu, M.; IMEC, Leuven, BELGIUM
Soltwisch, Victor; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Scholze, Frank; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Philipsen, V.; IMEC, Leuven, BELGIUM
|
| Quelle/Jahr | Journal of the Optical Society of America A: 38 (2021), 4, 498 - 503 |
| Artikelnummer | 416235 |
| ISSN | 0740-3232 (PRINT) ; 1084-7529 (PRINT) ; 1520-8532 (ONLINE) |
| DOI | |
| Verlag | Washington, D.C.: Optical Society of America |
| Zusammenfassung | A refined model of an extreme ultraviolet (EUV) mask stack consisting of the Mo/Si multilayer coated by a Ru protective layer and a TaBN/TaBO absorber layer was developed to facilitate accurate simulations of EUV mask performance for high-NA EUV photo-lithography (EUVL) imaging. The model is derived by combined analysis of the measured EUV and x ray reflectivity of an industry-representative mask blank. These two sets of measurements were analyzed using a combined free-form analysis procedure that delivers high-resolution x ray and EUV optical constant depth profiles based on self-adapted sets of sublayers as thin as 0.25 nm providing a more accurate description of the reflectivity than obtained from only EUV reflectivity. “Free-formanalysis” means that the shape of the layer interfaces in the model is determined experimentally and is not given a priori by the structure model. To reduce the numerical effort for EUV imaging simulations, a low-resolution model of the multilayer and absorber stack with sublayer thicknesses larger than 2 nm, that fits to only the EUV reflectance, was derived from the high resolution model. Rigorous high-NA EUVL simulations were done to compare the performance of the new model to our previous work [Proc. SPIE 8886, 88860B (2013)]. |
| Themenbereich der Metrologie | Photometrie und Radiometrie |
| Förderinformationen (1) |
Förderername: European Commission (EC)
Förderer ID: 0000 0001 2242 8989 Förderer ID Typ: ISNI Förderprogramm: EU Framework Programme for Research and Innovation - Horizon 2020 Titel der Förderung: TAPES3, program H2020-EU.2.1.1.7. - ECSEL, topic ECSEL-2017-1 - IA Förderungsnummer: 783247 |