| Zugriffsnummer | 45210 |
| Dokumenttyp | Konferenzartikel |
| Peer Review | mit Peer Review |
| Sprache | Englisch |
| Titel | Study of EUV reticle storage effects through exposure on EBL2 and NXE |
| Autor(in); Institution |
Jonckheere, Rik; imec, Leuven, BELGIUM
Wu, Chien-Ching; TNO, CK Delft, NETHERLANDS
Rooij-Lohmann, Véronique de; TNO, CK Delft, NETHERLANDS
Elstgeest, Dorus; TNO, CK Delft, NETHERLANDS
Lensen, Henk; TNO, CK Delft, NETHERLANDS
Hönicke, Philipp; 7.2, Röntgenmesstechnik mit Synchrotronstrahlung, PTB-Berlin
Kolbe, Michael; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Soltwisch, Victor; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Zech, Claudia; 7.2, Röntgenmesstechnik mit Synchrotronstrahlung, PTB-Berlin
Scholze, Frank; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Aubert, Remko; imec, Leuven, BELGIUM
Nair, Vineet Vijayakrishnan; imec, Leuven, BELGIUM
Hendrickx, Eric; imec, Leuven, BELGIUM
|
| Quelle/Jahr | Extreme Ultraviolet Lithography 2020:(2020), 1 - 14 |
| Artikelnummer | 115170Z |
| Schriftenreihe | Proceedings of SPIE: 11517 |
| Availability | [online only] |
| Herausgeber(in) |
Naulleau, Patrick P
Gargini, Paolo A
Itani, Toshiro
Ronse, Kurt G.
|
| ISSN | 0277-786X |
| ISBN | 978-1-5106-3843-3 |
| DOI | |
| Verlag | Bellingham, Wash.: SPIE |
| Konferenzangaben | SPIE Photomask Technology + EUV Lithography, 2020, Virtual Conference, 21 Septembre 2020 |
| Freie Schlagworte | EUV lithography ; reticle handling ; lifetime testing ; storage effects ; contamination growth ; printing performance |
| Zusammenfassung | A parallelism is reported between reticle lifetime experiments undertaken on TNO’s EBL2 platform and wafer printing on the ASML NXE EUV scanner installed at imec. EBL2 mimics reticle impact due to exposure of ten thousand wafers in NXE representative conditions in less than a day. In-situ X-ray Photoelectron Spectroscopy (XPS) has shown that a local high-dose EUV exposure removes surface carbon and reduces ruthenium oxide to ruthenium. These effects not only happen at the directly exposed location, but equally centimeters away. Repeating XPS after a period of reticle storage outside of the vacuum, revealed regrowth of such contamination layer and re-oxidation of ruthenium. This learning based on EBL2 explains a small but significant trend noticed in critical dimension measurement results on wafer through a batch of wafers exposed on NXE, depending on the prior storage conditions of the reticle. During first exposures following reticle entry into vacuum reticle storage effects become gradually undone. Both storage-induced mask contamination effects are shown to build-up beyond one month. Local effects of the high-dose EUV exposure remain measurable by EUV reflectometry after several weeks of storage in air. |
| Themenbereich der Metrologie | Photometrie und Radiometrie |
Zitierung
Jonckheere, R., Wu, C.-C., Rooij-Lohmann, V. D., Elstgeest, D., Lensen, H., Hönicke, P., Kolbe, M., Soltwisch, V., Zech, C., Scholze, F., Aubert, R., Nair, V. V., & Hendrickx, E. (2020). Study of EUV reticle storage effects through exposure on EBL2 and NXE. SPIE Photomask Technology + EUV Lithography, 2020, Virtual Conference, 21 Septembre 2020. https://doi.org/10.1117/12.2573125