| Zugriffsnummer | 45182 |
| Dokumenttyp | Zeitschriftenartikel |
| Peer Review | unbekannt |
| Sprache | Englisch |
| Titel | Direct current to 350 GHz operation of rapid-single-flux-quantum T-flipflop circuits in niobium technology |
| Autor(in); Institution |
Khabipov, Marat I.; 2.402, RSFQ-Logikschaltungen, PTB-Braunschweig; IREE Russian Academy of Sciences, Moscow, RUSSIA
Dolata, Ralf; 2.401, Einzelelektronentunneln, PTB-Braunschweig
Buchholz, Friedrich-Immanuel; 2.402, RSFQ-Logikschaltungen, PTB-Braunschweig
Kessel, Wolfgang; 2.23, Elektrisches Rauschen, PTB-Braunschweig
Niemeyer, Jürgen; 2.2, Hochfrequenzmesstechnik, PTB-Braunschweig
|
| Quelle/Jahr | Superconductor Science and Technology: 9 (1996), 9, 822 - 825 |
| ISSN | 0953-2048 (PRINT) ; 1361-6668 (ONLINE) |
| DOI | |
| Verlag | Bristol: IOP Publishing |
| Zusammenfassung | The operational functionality of rapid-single-flux-quantum (RSFQ) T-flipflop circuits has been experimentally investigated in the frequency range from dc up to nearly three times the characteristic frequency (fc ≅ 3Vc/Φ0). The operational range found is divided into two domains different in nature. In the first domain, ranging up to frequencies of 120 GHz (fc ≅ Vc/Φ0), correct digital operation of the device has been found. Beyond this range a second domain has been found, ranging from about 200 GHz to nearly 350 GHz, in which quasi-analogous operation of frequency dividing is suggested. Typical bias current margins are ± 20 % in the first domain and ± 10% in the second. The circuits have been fabricated using Nb/Al2O3 - Al/Nb trilayer technology with externally shunted Josephson tunnel junctions of critical current densities of jc ≅ 1 kA cm-2 and smallest areas of about 12 μm2. The characteristic voltage is Vc = 250 μV and the McCumber parameter βc ≤ 1. |
Zitierung
Khabipov, M. I., Dolata, R., Buchholz, F.-I., Kessel, W., & Niemeyer, J. (1996). Direct current to 350 GHz operation of rapid-single-flux-quantum T-flipflop circuits in niobium technology. Superconductor Science and Technology, 9(9), 822–825. https://doi.org/10.1088/0953-2048/9/9/019