Integrated 9Be+ multi-qubit gate device for the ion-trapquantum computer

Hahn, Henning; Zarantonello, Giorgio; Schulte, Marius; Bautista-Salvador, Amado; Hammerer, Klemens; Ospelkaus, Christian

doi:https://doi.org/10.1038/s41534-019-0184-5

Zugriffsnummer	45173
Dokumenttyp	Zeitschriftenartikel
Peer Review	mit Peer Review
Sprache	Englisch
Titel	Integrated ⁹Be⁺ multi-qubit gate device for the ion-trapquantum computer
Autor(in); Institution	Hahn, Henning; QUEST Institute for Experimental Quantum Metrology, PTB-Braunschweig; Leibniz Universität, Institut für Quantenoptik, Hannover, GERMANY Zarantonello, Giorgio; QUEST Institute for Experimental Quantum Metrology, PTB-Braunschweig; Leibniz Universität, Institut für Quantenoptik, Hannover, GERMANY Schulte, Marius; Leibniz University Hannover, Institute for Theoretical Physics and Institute for Gravitational Physics (Albert-Einstein-Institute), Hannover, GERMANY Bautista-Salvador, Amado; QUEST Institute for Experimental Quantum Metrology, PTB-Braunschweig; Leibniz Universität, Institut für Quantenoptik, Hannover, GERMANY Hammerer, Klemens; Leibniz University Hannover, Institute for Theoretical Physics and Institute for Gravitational Physics (Albert-Einstein-Institute), Hannover, GERMANY Ospelkaus, Christian; QUEST Institute for Experimental Quantum Metrology, PTB-Braunschweig; Leibniz Universität, Institut für Quantenoptik, Hannover, GERMANY
Quelle/Jahr	npj Quantum Information: 5 (2019), 1 - 5
Artikelnummer	70
Availability	[online only]
ISSN	2056-6387
DOI	https://doi.org/10.1038/s41534-019-0184-5
URL	https://www.nature.com/articles/s41534-019-0184-5.pdf?origin=ppub
Verlag	London: Nature Publishing Group
Freie Schlagworte	Atom an ion trapping and guiding ; Multi-qubit gate ; Quantum computer
Zusammenfassung	We demonstrate the experimental realization of a two-qubit Mølmer–Sørensen gate on a magneticfield-insensitive hyperfinetransition in ⁹Be⁺ ions using microwave near-fields emitted by a single microwave conductor embedded in a surface electrode iontrap. The design of the conductor was optimized to produce a high oscillating magneticfield gradient at the ion position. Themeasured gatefidelity is determined to be 98.2 ± 1.2% and is limited by technical imperfections, as is confirmed by acomprehensive numerical error analysis. The conductor design can potentially simplify the implementation of multi-qubit gates and represents a self-contained, scalable module for entangling gates within the quantum CCD architecture for an ion-trap quantum computer.

Kostenfreier Zugang	Open Access Gold
Rechteinformation	CC BY 4.0 ; Creative Commons Attribution 4.0 License

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Hahn, H., Zarantonello, G., Schulte, M., Bautista-Salvador, A., Hammerer, K., & Ospelkaus, C. (2019). Integrated ⁹Be⁺ multi-qubit gate device for the ion-trapquantum computer. npj Quantum Information, 5, 1–5. https://doi.org/10.1038/s41534-019-0184-5

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