| Zugriffsnummer | 45145 |
| Dokumenttyp | Konferenzartikel |
| Peer Review | mit Peer Review |
| Sprache | Englisch |
| Titel | Mask absorber for next generation EUV lithography |
| Autor(in); Institution |
Wu, Meiyi; imec, Leuven, BELGIUM
Thakare, Devesh; imec, Leuven, BELGIUM
de Marneffe, Jean-François; imec, Leuven, BELGIUM
Jaenen, Patrick; imec, Leuven, BELGIUM
Souriau, Laurent; imec, Leuven, BELGIUM
Opsomer, Karl; imec, Leuven, BELGIUM
Soulié, Jean-Philippe; imec, Leuven, BELGIUM
Erdmann, Andreas; Fraunhofer Institute for Integrated Systems and Device Technology, Erlangen, GERMANY
Mesilhy, Hazem; Fraunhofer Institute for Integrated Systems and Device Technology, Erlangen, GERMANY
Naujok, Philipp; optiX fab GmbH, Jena, GERMANY
Foltin, Markus; Süss MicroTec Photomask Equipment GmbH & Co. KG, Sternenfels, GERMANY
Soltwisch, Victor; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Saadeh, Qais; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Philipsen, Vicky; imec, Leuven, BELGIUM
|
| Quelle/Jahr | Extreme Ultraviolet Lithography 2020:(2020), 1 - 15 |
| Artikelnummer | 1151706 |
| Schriftenreihe | Proceedings of SPIE: 11517 |
| Availability | [online-only] |
| Herausgeber(in) |
Naulleau, Patrick P
Gargini, Paolo A.
Itani, Toshiro
Ronse, Kurt G.
|
| ISSN | 0277-786X |
| DOI | |
| Verlag | Bellingham, Wash.: SPIE |
| Konferenzangaben | SPIE Photomask Technology + EUV Lithography, Virtual Conference, 21-25 September 2020 |
| Freie Schlagworte | Mask absorber ; extreme ultraviolet lithography ; refractive index ; mask cleaning ; etching |
| Zusammenfassung | Novel mask absorber designs are calling attention of the EUVL community due to their ability to mitigate mask 3D effects. Material selection is part of such optimization [1]. In this paper we propose several candidates as novel EUV lithography mask absorbers, namely TaTeN, Ru-Ta and Pt-Mo alloys. The choice of these materials is based on their theoretical performance evaluated by EUV imaging simulation based on their complex refractive index N(λ) = n(λ) +ik(λ), where the optical constants n and k relate to the phase velocity and to the absorption of an electromagnetic radiation with a wavelength λ, respectively. The materials are deposited as thin films on Si substrate with an additional Ru layer to mimic the cap of multilayer mirror (MLM) on the real mask. The experimental n & k values are determined by analyzing EUV reflectivity data obtained using a 13.5 nm synchrotron EUV radiation. The imaging simulation presented in this paper consists of calculation of several imaging metrics like non-telecentricity, normalized image log-slop (NILS), and threshold-to-size for specific use cases using the novel absorber. It also compares the proposed materials to the reference TaBN absorber. TaTeN shows higher absorption than TaBN and refraction closer to 1, which improves phase matching for a high k absorber. The refractive index of Ru-Ta and Pt-Mo alloys exhibits a large difference to that of air and provides the required phased shift of attenuated phase shift masks [2]. The characterizations of these materials target the requirements of an EUVL mask: durability for mask cleaning, mask lifetime and etchablity for mask patterning. The stability is first tested against several standard mask cleaning solutions by beaker test up to 24 hours with the film structure monitored by X-ray reflectivity analysis. The samples are also exposed to hydrogen plasma to imitate the working environment in a EUV scanner. Material integrity is checked with Rutherford backscattering spectroscopy before and after the exposure. Concerning material patterning, chemical reactive ion etch is applied for preliminary tests. A proper etch recipe is found for TaTeN with good etch rate (about 60 nm/min) and good selectivity to Ru underlayer (Ru etch is ignorable). 1] V. Philipsen et al., “Mask absorber development to enable next-generation EUVL,” in Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology, Yokohama, Japan, Jun. 2019, p. 24, doi: 10.1117/12.2537967. [2] A.Erdmannet al.,"Perspectives and tradeoffs of novel absorber materials for high NA EUV lithography (Conference Presentation)", Proc. SPIE 11323,Extreme Ultraviolet (EUV) Lithography XI, 1132309 (24 March 2020); https://doi.org/10.1117/12.2550882 |
| Themenbereich der Metrologie | Photometrie und Radiometrie |
| Förderinformationen (1) |
Förderername: Electronic Components and Systems for European Leadership Joint Undertaking (ECSEL JU)
Förderer ID: 0000 0004 7866 7630 Förderer ID Typ: ISNI Förderungsnummer: No 783247 -TAPES3 |
| Förderinformationen (2) |
Förderername: European Commission (EC)
Förderer ID: 0000 0001 2242 8989 Förderer ID Typ: ISNI Förderprogramm: EU Framework Programme for Research and Innovation Horizon 2020 |
Zitierung
Wu, M., Thakare, D., de Marneffe, J.-F., Jaenen, P., Souriau, L., Opsomer, K., Soulié, J.-P., Erdmann, A., Mesilhy, H., Naujok, P., Foltin, M., Soltwisch, V., Saadeh, Q., & Philipsen, V. (2020). Mask absorber for next generation EUV lithography. SPIE Photomask Technology + EUV Lithography, Virtual Conference, 21-25 September 2020. http://doi.org/10.1117/12.2572114