| Zugriffsnummer | 44724 |
| Dokumenttyp | Zeitschriftenartikel |
| Peer Review | mit Peer Review |
| Sprache | Englisch |
| Titel | Black-silicon ultraviolet photodiodes achieve external quantum efficiency above 130% |
| Autor(in); Institution |
Garin, M.; Department of Micro- and Nanosciences, Aalto University, Espoo, FINLAND; Department of Engineering, Universitat de Vic - Universitat Central de Catalunya, Vic, SPAIN; Universitat Politècnica de Catalunya, Barcelona, SPAIN
Heinonen, J.; Department of Micro- and Nanosciences, Aalto University, Espoo, FINLAND; EIFys inc, Espoo, FINLAND
Werner, Lutz; 7.3, Detektorradiometrie und Strahlungsthermometrie, PTB-Berlin
Pasanen, T. P.; Department of Micro- and Nanosciences, Aalto University, Espoo, FINLAND
Vähänissi, V.; Department of Micro- and Nanosciences, Aalto University, Espoo, FINLAND
Haarahiltunen, A.; EIFys inc, Espoo, FINLAND
Juntunen, M.; EIFys inc, Espoo, FINLAND
Savin, H.; Department of Micro- and Nanosciences, Aalto University, Espoo, FINLAND
|
| Quelle/Jahr | Physical Review Letters: 125 (2020), 7 S. |
| Artikelnummer | 117702 |
| ISSN | 0031-9007 (PRINT) ; 1079-7114 (ONLINE) ; 1092-0145 (CD-ROM) |
| DOI | |
| URL | |
| Verlag | Ridge, NY: American Physical Society |
| Zusammenfassung | At present, ultraviolet sensors are utilized in numerous fields ranging from various spectroscopy applications via biotechnical innovations to industrial process control. Despite of this, the performance of current UV sensors is surprisingly poor. Here, we break the theoretical one photon – one electron barrier and demonstrate a device with a certified external quantum efficiency (EQE) above 130% in UV range without external amplification. The record high performance is obtained using a nanostructured silicon photodiode with self-induced junction. We show that the high efficiency is based on effective utilization of multiple carrier generation by impact ionization taking place in the nanostructures. While the results can readily have a significant impact on the UV-sensor industry, the underlying technological concept can be applied to other semiconductor materials, thereby extending above unity response to longer wavelengths and offering new perspectives for improving efficiencies beyond the Shockley-Queisser limit. |
| Förderinformationen (1) |
Förderername: Spanish Ministry of Economy and Competitiveness (MINECO)
Titel der Förderung: ENE2015-74009-JIN |
| Förderinformationen (2) | Förderername: Micronova Nanofabrication Centre |
| Förderinformationen (3) |
Förderername: European Council
Förderer ID: 0000 0001 2259 4047 Förderer ID Typ: ISNI Titel der Förderung: ATTRACT Förderungsnummer: 777222 |
| Förderinformationen (4) |
Förderername: Academy of Finland (FA)
Förderer ID: 0000 0004 0647 6886 Förderer ID Typ: ISNI Förderprogramm: Photonics Research and Innovation (PREIN) |
Zitierung
Garin, M., Heinonen, J., Werner, L., Pasanen, T. P., Vähänissi, V., Haarahiltunen, A., Juntunen, M., & Savin, H. (2020). Black-silicon ultraviolet photodiodes achieve external quantum efficiency above 130%. Physical Review Letters, 125, 7 S. https://doi.org/10.1103/physrevlett.125.117702