| Zugriffsnummer | 44622 |
| Dokumenttyp | Zeitschriftenartikel |
| Peer Review | mit Peer Review |
| Sprache | Englisch |
| Titel | Directly addressable GaN based Nano LED arrays: fabrication and electro optical characterization |
| Autor(in); Institution |
Bezshlyakh, Daria D.; Technische Universität Braunschweig, Institute of Semiconductor Technology, Braunschweig, GERMANY; Laboratory for Emerging Nanometrology, Braunschweig, GERMANY
Spende, Hendrik; Technische Universität Braunschweig, Institute of Semiconductor Technology, Braunschweig, GERMANY; Laboratory for Emerging Nanometrology (LENA), Braunschweig, GERMANY; Epitaxy Competence Center ec2, Technische Universität Braunschweig, Braunschweig, GERMANY
Weimann, Thomas; 2.4, Quantenelektronik, PTB-Braunschweig
Hinze, Peter; 2.4, Quantenelektronik, PTB-Braunschweig
Bornemann, Steffen; Technische Universität Braunschweig, Institute of Semiconductor Technology, Braunschweig, GERMANY; Laboratory for Emerging Nanometrology (LENA), Braunschweig, GERMANY; Epitaxy Competence Center ec2, Technische Universität Braunschweig, Braunschweig, GERMANY
Gülink, Jan; Technische Universität Braunschweig, Institute of Semiconductor Technology, Braunschweig, GERMANY; Laboratory for Emerging Nanometrology (LENA), Braunschweig, GERMANY; Epitaxy Competence Center ec2, Technische Universität Braunschweig, Braunschweig, GERMANY
Canals, Joan; University of Barcelona, Department Electronic and Biomedical Engineering, Barcelona, SPAIN
Prades, Joan Daniel; University of Barcelona, Department Electronic and Biomedical Engineering, Barcelona, SPAIN
Dieguez, Angel; University of Barcelona, Department Electronic and Biomedical Engineering, Barcelona, SPAIN
Waag, Andreas; Technische Universität Braunschweig, Institute of Semiconductor Technology, Braunschweig, GERMANY; Laboratory for Emerging Nanometrology (LENA), Braunschweig, GERMANY; Epitaxy Competence Center ec2, Technische Universität Braunschweig, Braunschweig, GERMANY
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| Quelle/Jahr | Microsystems & Nanoengineering: 6 (2020), 1 - 10 |
| Artikelnummer | 88 |
| ISSN | 2096-1030 (PRINT) ; 2055-7434 (ONLINE) |
| DOI | |
| Verlag | London: Nature Research |
| Zusammenfassung | The rapid development of display technologies has raised interest in arrays of self-emitting, individually controlled light sources at the microscale. Gallium nitride (GaN) micro-light-emitting diode (LED) technology meets this demand. However, the current technology is not suitable for the fabrication of arrays of submicron light sources that can be controlled individually. Our approach is based on nano-LED arrays that can directly address each array element and a self-pitch with dimensions below the wavelength of light. The design and fabrication processes are explained in detail and possess two geometries: a 6 x 6 array with 400 nm LEDs and a 2 x 32 line array with 200 nm LEDs. These nano-LEDs are developed as core elements of a novel on-chip super-resolution microscope. GaN technology, based on its physical properties, is an ideal platform for such nano-LEDs. |
| Kostenfreier Zugang | Open Access Gold |
| Rechteinformation | CC BY 4.0 ; Creative Commons Attribution 4.0 License |
| Themenbereich der Metrologie | Elektrizität und Magnetismus |
| Forschungsprojekt | This work was funded by the European Union’s Horizon 2020 research and innovation program within the project of ChipScope under grant agreement no. 737089 and by the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany’s Excellence Strategy-EXC-2123 QuantumFrontiers-390837967. |
Zitierung
Bezshlyakh, D. D., Spende, H., Weimann, T., Hinze, P., Bornemann, S., Gülink, J., Canals, J., Prades, J. D., Dieguez, A., & Waag, A. (2020). Directly addressable GaN based Nano LED arrays: fabrication and electro optical characterization. Microsystems & Nanoengineering, 6, 1–10. https://doi.org/10.1038/s41378-020-00198-y