| Zugriffsnummer | 44573 |
| Dokumenttyp | Zeitschriftenartikel |
| Peer Review | mit Peer Review |
| Sprache | Englisch |
| Titel | Material combination of Tunnel-SiO2 with a (sub-)Monolayer of ALD-AlOx on silicon offering a highly passivating hole selective contact |
| Autor(in); Institution |
Hiller, Daniel; Research School of Engineering, Australian National University (ANU), Canberra, AUSTRALIA
Hönicke, Philipp; 7.2, Röntgenmesstechnik mit Synchrotronstrahlung, PTB-Berlin
König, Dirk; Integrated Materials Design Centre (IMDC), University of New South Wales (UNSW), Sydney, AUSTRIA
|
| Quelle/Jahr | Solar Energy Materials and Solar Cells: 215 (2020), 9 |
| Artikelnummer | 110654 |
| ISSN | 0927-0248 |
| DOI | |
| Verlag | Amsterdam: Elsevier |
| Freie Schlagworte | Hole-selective contact ; Silicon surface passivation ; Atomic layer deposition ; Aluminum oxide ; Monolayer ; Grazing incidence X-ray fluorescence spectrometry |
| Zusammenfassung | In this work, we investigate a passivating hole-selective tunnel contact on crystalline silicon (Si) based on an ultrathin thermal SiO2 and a (sub-)monolayer thick aluminum oxide (AlOx) deposited by atomic layer deposition (ALD) with 1 to 7 cycles. Rapid thermal annealing (RTA) is essential to activate the passivation and intense visible light is demonstrated to play a key role in the formation and occupation of the Al-induced acceptor states in SiO2 that provide the passivation. This simple stack provides very good surface passivation on n-type Si with a surface saturation current density as low as J0s = 25 fA/cm2 (Seff = 2.7 cm/s) and a contact resistivity ρc of ~200 mΩ cm2, while being Si-dopant-free, fully transparent and firing-stable. The Al-deposition on thermal SiO2 during the initial ALD-cycles is studied carefully by synchrotron-based reference-free grazing incidence X-ray fluorescence spectrometry (GIXRF). Different metallization and capping approaches are tested and discussed. |
| Themenbereich der Metrologie | Photometrie und Radiometrie |
Zitierung
Hiller, D., Hönicke, P., & König, D. (2020). Material combination of Tunnel-SiO₂ with a (sub-)Monolayer of ALD-AlOx on silicon offering a highly passivating hole selective contact. Solar Energy Materials and Solar Cells, 215(9). https://doi.org/10.1016/j.solmat.2020.110654