| Zugriffsnummer | 44491 |
| Dokumenttyp | Zeitschriftenartikel |
| Peer Review | mit Peer Review |
| Sprache | Englisch |
| Titel | Thermal charge carrier driven noise in transmissive semiconductor optics |
| Autor(in); Institution |
Bruns, Florian; 4.01, Metrologie für funktionale Nanosysteme, PTB-Braunschweig; Technische Universität Braunschweig, LENA Laboratory for Emerging Nanometrology, Braunschweig, GERMANY
Vyatchanin, Sergey; M. V. Lomonosov, Moscow State University, Faculty of Physics and Quantum Technology Centre, Moscow, RUSSIA
Dickmann, Johannes; 4.01, Metrologie für funktionale Nanosysteme, PTB-Braunschweig
Glaser, Rene; Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Jena, GERMANY
Heinert, Daniel; Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Jena, GERMANY
Nawrodt, Ronny; Universität Stuttgart, Physikalisches Institut, Stuttgart, GERMANY
Kroker, Stefanie; 4.01, Metrologie für funktionale Nanosysteme, PTB-Braunschweig; Technische Universität Braunschweig, LENA Laboratory for Emerging Nanometrology, Braunschweig, GERMANY
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| Quelle/Jahr | Physical Review D: 102 (2020), 2, 1 - 7 |
| Artikelnummer | 022006 |
| ISSN | 2470-0010 (PRINT) ; 2470-0029 (ONLINE) |
| DOI | |
| URL | |
| Verlag | Woodbury, NY: American Physical Society (APS) |
| Zusammenfassung | Several sources of noise limit the sensitivity of current gravitational wave detectors. Currently, dominant noise sources include quantum noise and thermal Brownian noise, but future detectors will also be limited by other thermal noise channels. In this paper, we study a thermal noise source which is caused by spatial charge carrier density variations in semiconductor materials. We provide an analytical model for the understanding of charge carrier fluctuations under the presence of screening effects and show that charge carrier noise will not be a limiting noise source for third-generation gravitational wave detectors. |