| Zugriffsnummer | 44229 |
| Dokumenttyp | Zeitschriftenartikel |
| Peer Review | unbekannt |
| Sprache | Englisch |
| Titel | Excitonic dephasing in semimagnetic semiconductors |
| Autor(in); Institution |
Cundiff, S. T.; Philipps Universität-Marburg, Fachbereich Physik, Marburg, GERMANY; Bell Laboratories, Lucent Technologies, Holmdel, NJ, USA
Hellmann, R.; Philipps Universität-Marburg, Fachbereich Physik, Marburg, GERMANY
Koch, M.; Philipps Universität-Marburg, Fachbereich Physik, Marburg, GERMANY; Bell Laboratories, Lucent Technologies, Holmdel, NJ, USA
Mackh, G.; Universität Würzburg, Physikalisches Institut, Würzburg, GERMANY
Waag, A.; Universität Würzburg, Physikalisches Institut, Würzburg, GERMANY
Landwehr, G.; Universität Würzburg, Physikalisches Institut, Würzburg, GERMANY
Knox, W. H.; Bell Laboratories, Lucent Technologies, Holmdel, NJ, USA
Göbel, Ernst Otto; Präsidium, P, PTB-Braunschweig; Philipps Universität-Marburg, Fachbereich Physik, Marburg, GERMANY
|
| Quelle/Jahr | Journal of the Optical Society of America B: 13 (1996), 6, 1263 - 1267 |
| ISSN | 0740-3224 (PRINT) ; 1520-8540 (ONLINE) |
| DOI | |
| Verlag | Washington, DC: Optical Society of America (OSA) |
| Zusammenfassung | The presence of magnetic ions in a dilute semiconductor quantum well is shown to decrease dramatically the low-temperature excitonic dephasing time measured by transient four-wave mixing. The decrease is associated with the magnetic nature of the material. Surprisingly, the application of a magnetic field does not significantly change the dephasing time, which indicates that there must exist a fast dephasing mechanism in addition to the spin–spin interactions responsible for magnetic polaron formation. |
