| Zugriffsnummer | 43429 |
| Dokumenttyp | Konferenzartikel |
| Peer Review | mit Peer Review |
| Sprache | Englisch |
| Titel | Lifetime test on EUV photomask with EBL2 |
| Autor(in); Institution |
Wu, Chien-Ching; TNO, Delft, THE NETHERLANDS
Bender, Markus; Advanced Mask Technology Center GmbH & Co KG, Dresden, GERMANY
Jonckheere, Rik; imec, Leuven, BELGIUM
Scholze, Frank; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Bekman, Herman; TNO, Delft, THE NETHERLANDS
van Putten, Michael; TNO, Delft, THE NETHERLANDS
de Zanger, Rory; TNO, Delft, THE NETHERLANDS
Ebeling, Rob; TNO, Delft, THE NETHERLANDS
Westerhout, Jeroen; TNO, Delft, THE NETHERLANDS
Nicolai, Kyri; TNO, Delft, THE NETHERLANDS
van Veldhoven, Jacqueline; TNO, Delft, THE NETHERLANDS
de Rooij-Lohmann, Véronique; TNO, Delft, THE NETHERLANDS
Kievit, Olaf; TNO, Delft, THE NETHERLANDS
Deutz, Alex; TNO, Delft, THE NETHERLANDS
|
| Quelle/Jahr | Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology:(2019), 111780E-1 - 111780E-7 |
| Artikelnummer | 111780E |
| Schriftenreihe | Proceedings of SPIE: 11178 |
| ISSN | 0277-786X (PRINT) ; 1996-756X (ONLINE) |
| ISBN | 978-1-5106-3073-4 (print) ; 978-1-5106-3074-1 (online) |
| DOI | |
| Verlag | Bellingham, Wash.: SPIE |
| Konferenzangaben | The 26th Symposium on Photomask and NGL Mask Technology,, Yokohama, 16-18, April, 2019, Japan |
| Freie Schlagworte | EBL2 ; EUV lithography ; X-ray photoelectron spectroscopy (XPS) ; photomask ; lifetime |
| Zusammenfassung | TNO has built EBL2, an EUV exposure facility equipped with an in vacuo X-ray photoelectron spectroscopy setup (XPS) and an in-situ ellipsometer. EBL2 enables lifetime testing of EUV optics, photomasks, pellicles and related components under development in relevant EUV scanner and source conditions, which was previously not available to industry. This lifetime testing can help the industry to prepare for high volume production using EUV lithography by bringing forward information about material behavior which facilitates the development cycle. This paper describes an EUV photomask lifetime test performed at EBL2. The mask was exposed to different EUV doses under a controlled gas and temperature environment. To investigate how EUV light interacts with the mask, various analysis techniques were applied before and after EUV exposure. In-situ XPS was used to investigate elemental ompositions of the mask surface. An ex-situ critical dimension scanning electron microscope (CD-SEM) and an atomic force microscope (AFM) were used to explore the impact of EUV light on critical dimensions (CD) and feature profiles. In addition, EUV reflectometry (EUVR) was used to investigate the change of reflectivity after EUV exposures. The exposure conditions are reported, as well as an analysis of the effects observed. |
| Themenbereich der Metrologie | Photometrie und Radiometrie |
Zitierung
Wu, C.-C., Bender, M., Jonckheere, R., Scholze, F., Bekman, H., van Putten, M., de Zanger, R., Ebeling, R., Westerhout, J., Nicolai, K., van Veldhoven, J., de Rooij-Lohmann, V., Kievit, O., & Deutz, A. (2019). Lifetime test on EUV photomask with EBL2. The 26th Symposium on Photomask and NGL Mask Technology,, Yokohama, 16-18, April, 2019, Japan. https://doi.org/10.1117/12.2537734