| Zugriffsnummer | 42964 |
| Dokumenttyp | Konferenzartikel |
| Peer Review | mit Peer Review |
| Sprache | Englisch |
| Titel | Mask absorber development to enable next-generation EUVL |
| Autor(in); Institution |
Phillipsen, Vicky; imec, Leuven, BELGIUM
Vu Luong, Kim; imec, Leuven, BELGIUM
Opsomer, Karl; imec, Leuven, BELGIUM
Souriau, Laurent; imec, Leuven, BELGIUM
Rip, Jens; imec, Leuven, BELGIUM
Detavermier, Christophe; Univ. of Ghent, BELGIUM
Erdmann, Andreas; Fraunhofer IISB, Erlangen, GERMANY
Evanschitzky, Peter; Fraunhofer IISB, Erlangen, GERMANY
Laubis, Christian; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Soltwisch, Victor; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Hendrickx, Eric; imec, Leuven, BELGIUM
|
| Quelle/Jahr | Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology:(2019), 111780F-1 - 111780F-7 |
| Schriftenreihe | Proceedings of SPIE: 11178 |
| Herausgeber(in) |
Ando, Akihiko
|
| ISSN | 0277-786X (PRINT) ; 1996-756X (ONLINE) |
| ISBN | 978-1-5106-3073-4 |
| DOI | |
| Verlag | Bellingham, Wash.: SPIE |
| Konferenzangaben | The 26th Symposium on Photomask and NGL Mask Technology, Yokohama, 19-21, April, 2019, Japan |
| Freie Schlagworte | EUV mask absorber ; mask 3D effects ; absorber characterization ; rigorous mask 3D lithography simulation ; material optical properties ; mask durability |
| Zusammenfassung | In next-generation EUV imaging for foundry N5 dimensions and beyond, inherent pitch- and orientation-dependent effects on wafer level will consume a significant part of the lithography budget using the current Ta-based mask. Mask absorber optimization can mitigate these so-called mask 3D effects. Last year at the SPIE Photomask and EUVL conference, EUV mask absorber change is recognized by the community as key enabler of next-generation EUV lithography. Through rigorous lithographic simulations we have identified regions, based on the material optical properties and their gain in imaging performance compared to the reference Ta-based absorber [6]. In addition, we have established a mask absorber requirement test flow to validate the candidate material to the full mask supply chain. In this paper we discuss in more detail Te- and Ru- based alloys which cover these different improvement regions. Candidate materials are evaluated on film morphology, stability during combined hydrogen and EUV loading, and thermal and chemical durability. The EUV optical constants are measured by EUV reflectometry, and preliminary results of plasma etching are shown to enable patterning. |
| Themenbereich der Metrologie | Photometrie und Radiometrie |
Zitierung
Phillipsen, V., Vu Luong, K., Opsomer, K., Souriau, L., Rip, J., Detavermier, C., Erdmann, A., Evanschitzky, P., Laubis, C., Hönicke, P., Soltwisch, V., & Hendrickx, E. (2019). Mask absorber development to enable next-generation EUVL. The 26th Symposium on Photomask and NGL Mask Technology, Yokohama, 19-21, April, 2019, Japan. https://doi.org/10.1117/12.2537967