| Zugriffsnummer | 42563 |
| Dokumenttyp | Zeitschriftenartikel |
| Peer Review | mit Peer Review |
| Sprache | Englisch |
| Titel | Homogeneous large-area quasi-free-standing monolayer and bilayer graphene on SiC |
| Autor(in); Institution |
Momeni Pakdehi, Davood; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Pierz, Klaus; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Wundrack, Stefan; 3.1, Allgemeine und Anorganische Chemie, PTB-Braunschweig
Aprojanz, J.; Leibniz Universität Hannover, Institut für Festkörperphysik, Hannover, GERMANY
Ngyuen, T.T.N.; Technische Universität Chemnitz, Institut für Physik, Chemnitz, GERMANY
Dziomba, Thorsten; 5.1, Oberflächenmesstechnik, PTB-Braunschweig
Hohls, Frank; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Bakin, A.; Technische Universität Braunschweig, Institut für Halbleitertechnik, Hans-Sommer Straße, Braunschweig, GERMANY; Technische Universität Braunschweig, Laboratory of Emerging Nanometrology (LENA), Braunschweig, GERMANY
Stosch, Rainer; 3.1, Allgemeine und Anorganische Chemie, PTB-Braunschweig
Tegenkamp, C.; Leibniz Universität Hannover, Institut für Festkörperphysik, Hannover, GERMANY; Technische Universität Chemnitz, Institut für Physik, Chemnitz, GERMANY
Ahlers, Franz J.; 2.6, Elektrische Quantenmetrologie, PTB-Braunschweig
Schumacher, Hans Werner; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
|
| Quelle/Jahr | ACS Applied Nano Materials: 2 (2019), 2, 844 - 852 |
| Availability | [online only] |
| ISSN | 2574-0970 |
| DOI | |
| Verlag | Washington, DC: ACS Publications |
| Freie Schlagworte | epitaxial graphene ; argon gas flow ; graphene buffer layer ; large-scale graphene growth ; resistance anisotropy ; SiC terrace steps ; monolayer graphene ; freestanding monolayer graphene ; freestanding bilayer graphene ; polymer-assisted sublimation growth |
| Zusammenfassung | In this study, we first show that the argon flow during epitaxial graphene growth is an important parameter to control the quality of the buffer and the graphene layer. Atomic force microscopy (AFM) and low-energy electron diffraction (LEED) measurements reveal that the decomposition of the SiC substrate strongly depends on the Ar mass flow rate while pressure and temperature are kept constant. Our data are interpreted by a model based on the competition of the SiC decomposition rate, controlled by the Ar flow, with a uniform graphene buffer layer formation under the equilibrium process at the SiC surface. The proper choice of a set of growth parameters allows the growth of a defect-free, ultrasmooth, and coherent graphene-free buffer layer and bilayer-free monolayer graphene sheets which can be transformed into large-area high-quality quasi-free-standing monolayer and bilayer graphene by hydrogen intercalation. AFM, scanning tunneling microscopy, Raman spectroscopy, and electronic transport measurements underline the excellent homogeneity of the resulting quasi-free-standing layers. Electronic transport measurements in four-point probe configuration reveal a homogeneous low resistance anisotropy on both μm and mm scales. |
| Themenbereich der Metrologie | Metrologie in der Chemie und Stoffeigenschaften |
Zitierung
Momeni Pakdehi, D., Pierz, K., Wundrack, S., Aprojanz, J., Ngyuen, T., Dziomba, T., Hohls, F., Bakin, A., Stosch, R., Tegenkamp, C., Ahlers, F. J., & Schumacher, H. W. (2019). Homogeneous large-area quasi-free-standing monolayer and bilayer graphene on SiC. ACS Applied Nano Materials, 2(2), 844–852. https://doi.org/10.1021/acsanm.8b02093