| Zugriffsnummer | 41599 |
| Dokumenttyp | Zeitschriftenartikel |
| Peer Review | mit Peer Review |
| Sprache | Englisch |
| Titel | Performance analysis and simulation of vertical gallium nitride nanowire transistors |
| Autor(in); Institution |
Witzigmann, Bernd; University of Kassel, Electrical Engineering/Computer Science Department and CINSaT, Kassel, GERMANY
Yu, Feng; TU Braunschweig, Institute of Semiconductor Technology (IHT) and Laboratory for Emerging Nanometrology (LENA), Braunschweig, GERMANY
Frank, Kristian; University of Kassel, Electrical Engineering/Computer Science Department and CINSaT, Kassel, GERMANY
Strempel, Klaas; TU Braunschweig, Institute of Semiconductor Technology (IHT) and Laboratory for Emerging Nanometrology (LENA), Braunschweig, GERMANY
Fatahilah, Muhammad Fahlesa; TU Braunschweig, Institute of Semiconductor Technology (IHT) and Laboratory for Emerging Nanometrology (LENA), Braunschweig, GERMANY
Schumacher, Hans Werner; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Wasisto, Hutomo Suryo; TU Braunschweig, Institute of Semiconductor Technology (IHT) and Laboratory for Emerging Nanometrology (LENA), Braunschweig, GERMANY
Römer, Friedhard; University of Kassel, Electrical Engineering/Computer Science Department and CINSaT, Kassel, GERMANY
Waag, Andreas; TU Braunschweig, Institute of Semiconductor Technology (IHT) and Laboratory for Emerging Nanometrology (LENA), Braunschweig, GERMANY
|
| Quelle/Jahr | Solid-State Electronics: 144 (2018), 73 - 77 |
| ISSN | 0038-1101 (PRINT) ; 1879-2405 (ONLINE) |
| DOI | |
| Verlag | Amsterdam: Elsevier |
| Freie Schlagworte | nanowires ; transistor ; Gallium nitride ; simulation |
| Zusammenfassung | Gallium nitride (GaN) nanowire transistors are analyzed using hydrodynamic simulation. Both p-body and n-body devices are compared in terms of threshold voltage, saturation behavior and transconductance. The calculations are calibrated using experimental data. The threshold voltage can be tuned from enhancement to depletion mode with wire doping. Surface states cause a shift of threshold voltage and saturation current. The saturation current depends on the gate design, with a composite gate acting as field plate in the p-body device. |
| Themenbereich der Metrologie | Elektrizität und Magnetismus |
Zitierung
Witzigmann, B., Yu, F., Frank, K., Strempel, K., Fatahilah, M. F., Schumacher, H. W., Wasisto, H. S., Römer, F., & Waag, A. (2018). Performance analysis and simulation of vertical gallium nitride nanowire transistors. Solid-State Electronics, 144, 73–77. https://doi.org/10.1016/j.sse.2018.03.005