| Zugriffsnummer | 41582 |
| Dokumenttyp | Zeitschriftenartikel |
| Peer Review | mit Peer Review |
| Sprache | Englisch |
| Titel | Optical properties of a Cr/4H-SiC photodetector in the spectral range from ultraviolet to extreme ultraviolet |
| Autor(in); Institution |
Gottwald, Alexander; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Kroth, Udo; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Kalinina, Evgenia; Ioffe Institute, Russian Academy of Sciences, St. Petersburg, Russia
Zabrodskii, Vladimir; Ioffe Institute, Russian Academy of Sciences, St. Petersburg, Russia
|
| Quelle/Jahr | Applied Optics: 57 (2018), 28, 8431 - 8436 |
| ISSN | 1559-128X (PRINT) ; 2155-3165 (ONLINE) |
| DOI | |
| Verlag | Washington, DC: OSA |
| Zusammenfassung | This work examines the electrical and radiometric characteristics of a photodiode based on a 4H-SiC semiconductor material with a semitransparent Cr Schottky barrier of about 7 nm thickness. The device had a photosensitive area 10 mm in diameter. The spectral responsivity was determined in the wavelength range from 40 nm to 400 nm, thus particularly extending the characterization into the vacuum- and extreme ultraviolet spectral ranges. The photodiode showed a maximum quantum efficiency of 50% at 253 nm with a relative uniformity of 4% in the photosensitivity over its surface. The linearity of the photoresponse was measured at wavelengths of 70 nm and 265 nm for incident radiant powers from 2 nWto 800 nW, and no significant deviation from linearity was found. Regarding its electrical characteristics, the photodiode showed less than 10-13 A dark current at a reverse voltage of 10 V. |
| Themenbereich der Metrologie | Photometrie und Radiometrie |
| Förderinformationen (1) |
Förderername: Russian Science Foundation (RSF)
Förderer ID: 0000 0004 5908 1757 Förderer ID Typ: ISNI Förderungsnummer: 16-12-10106 |