| Zugriffsnummer | 41578 |
| Dokumenttyp | Zeitschriftenartikel |
| Peer Review | mit Peer Review |
| Sprache | Englisch |
| Titel | Normally off vertical 3-D GaN nanowire MOSFETs with inverted p-GaN channel |
| Autor(in); Institution |
Yu, Feng; Technische Universität Braunschweig, Institute of Semiconductor Technology (IHT), Laboratory for Emerging Nanometrology, Braunschweig, GERMANY
Strempel, Klaas; Technische Universität Braunschweig, Institute of Semiconductor Technology (IHT), Laboratory for Emerging Nanometrology, Braunschweig, GERMANY
Fatahilah, Muhammad Fahlesa; Technische Universität Braunschweig, Institute of Semiconductor Technology (IHT), Laboratory for Emerging Nanometrology, Braunschweig, GERMANY
Zhou, Hao; Technische Universität Braunschweig, Institute of Semiconductor Technology (IHT), Laboratory for Emerging Nanometrology, Braunschweig, GERMANY
Römer, Friedhard; University of Kassel, Computational Electronics and Photonics, Kassel, GERMANY
Bakin, Andrey; Technische Universität Braunschweig, Institute of Semiconductor Technology (IHT), Laboratory for Emerging Nanometrology, Braunschweig, GERMANY
Witzigmann, Bernd; University of Kassel, Computational Electronics and Photonics, Kassel, GERMANY
Schumacher, Hans Werner; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Wasisto, Hutomo Suryo; Technische Universität Braunschweig, Institute of Semiconductor Technology (IHT), Laboratory for Emerging Nanometrology, Braunschweig, GERMANY
Waag, Andreas; Technische Universität Braunschweig, Institute of Semiconductor Technology (IHT), Laboratory for Emerging Nanometrology, Braunschweig, GERMANY
|
| Quelle/Jahr | IEEE Transactions on Electron Devices: 65 (2018), 6, 2439 - 2445 |
| ISSN | 0018-9383 (PRINT) ; 1557-9646 (ONLINE) |
| DOI | |
| Verlag | New York, NY: IEEE |
| Freie Schlagworte | enhancement mode (E-mode) ; GaN nanowire (NW) ; logic circuit ; MOSFET ; switching ; top-down ; vertical transistor |
| Zusammenfassung | This paper reports on the normally off GaN vertical MOSFETs based on nanowires (NWs) with an inverted p-GaN channel and a wrap around-gate structure for the first time. Both the inductively coupled plasma dry reactive-ion etching and wet-chemical etching were employed to fabricate the vertically aligned GaN NWs from epitaxial thin films with a specified doping profile. During the wet etching, the influence of p-doping on the NW morphology was investigated, and the results could be explained by the proposed model. In comparison with the other c-axis NW transistors, an enhancement-mode (E-mode) operation with a superior threshold voltage (Vth) of 2.5 V has been reached in the fabricated GaN MOSFETs. Furthermore, a high-driving current density of 101 kA/cm2 as well as a high-current on and off ratio of 109 was obtained in the NWs, predicting a potential approach toward the future GaN electronics with vertical and smart architecture. |
| Themenbereich der Metrologie | Elektrizität und Magnetismus |
| Forschungsprojekt | 3D Concepts for Gallium-Nitride Electronics |
| Förderinformationen (1) |
Förderername: Deutsche Forschungsgemeinschaft (DFG)
Förderer ID: 0000 0001 2096 9829 Förderer ID Typ: ISNI Titel der Förderung: 3D Concepts for Gallium-Nitride Electronics Förderungsnummer: 10.13039/501100001659 |
Zitierung
Yu, F., Strempel, K., Fatahilah, M. F., Zhou, H., Römer, F., Bakin, A., Witzigmann, B., Schumacher, H. W., Wasisto, H. S., & Waag, A. (2018). Normally off vertical 3-D GaN nanowire MOSFETs with inverted p-GaN channel. IEEE Transactions on Electron Devices, 65(6), 2439–2445. https://doi.org/10.1109/ted.2018.2824985