| Zugriffsnummer | 41559 |
| Dokumenttyp | Konferenzartikel |
| Peer Review | unbekannt |
| Sprache | Englisch |
| Titel | Zero-field quantized anomalous Hall resistance of (Bi,Sb)2Te3 |
| Autor(in); Institution |
Götz, Martin; 2.6, Elektrische Quantenmetrologie, PTB-Braunschweig
Fijalkowski, Kajetan M.; Universität Würzburg, Physikalisches Institut (EP3), Würzburg, GERMANY
Pesel, Eckart; 2.6, Elektrische Quantenmetrologie, PTB-Braunschweig
Hartl, Matthias; Universität Würzburg, Physikalisches Institut (EP3), Würzburg, GERMANY
Schreyeck, Steffen; Universität Würzburg, Physikalisches Institut (EP3), Würzburg, GERMANY
Winnerlein, Martin; Universität Würzburg, Physikalisches Institut (EP3), Würzburg, GERMANY
Grauer, Stefan; Universität Würzburg, Physikalisches Institut (EP3), Würzburg, GERMANY
Scherer, Hansjörg; 2.6, Elektrische Quantenmetrologie, PTB-Braunschweig
Brunner, Karl; Universität Würzburg, Physikalisches Institut (EP3), Würzburg, GERMANY
Gould, Charles; Universität Würzburg, Physikalisches Institut (EP3), Würzburg, GERMANY
Molenkamp, Laurens W.; Universität Würzburg, Physikalisches Institut (EP3), Würzburg, GERMANY
Ahlers, Franz J.; 2.6, Elektrische Quantenmetrologie, PTB-Braunschweig
|
| Quelle/Jahr | 2018 Conference on Precision Electromagnetic Measurements (CPEM 2018), Full Digest:(2018), 554 - 555 |
| ISSN | 2160-0171 (ELECTRONIC) ; 0589-1485 (POD) |
| ISBN | 978-1-5386-0974-3 (PDF) ; 978-1-5386-0973-6 (USB) ; 978-1-5386-2130-1 (PoD) |
| DOI | |
| Verlag | Piscataway, NJ: IEEE |
| Konferenzangaben | Conference on Precision Electromagnetic Measurements ; CPEM 2018, Paris, 08-13, July, 2018, France |
| Freie Schlagworte | Quantum Hall effect ; quantum resistance standards ; quantum anomalous Hall effect |
| Zusammenfassung | In the quantum anomalous Hall effect, the edge states of a ferromagnetically doped topological insulator exhibit quantized Hall resistance and dissipationless transport at zero magnetic field. Here, we present a measurement of the resistance quantization of V-doped (Bi,Sb)2Te3 devices in zero external magnetic field. For the deviation of the quantized anomalous Hall resistance from R K we determined a value of 0.17 ± 0.25 μΩ/Ω. This is a step towards realization of a practical zero-field quantum resistance standard which in combination with the Josephson effect could provide the universal quantum units standard in the future. |
Zitierung
Götz, M., Fijalkowski, K. M., Pesel, E., Hartl, M., Schreyeck, S., Winnerlein, M., Grauer, S., Scherer, H., Brunner, K., Gould, C., Molenkamp, L. W., & Ahlers, F. J. (2018). Zero-field quantized anomalous Hall resistance of (Bi,Sb)₂Te₃. Conference on Precision Electromagnetic Measurements ; CPEM 2018, Paris, 08-13, July, 2018, France. https://doi.org/10.1109/cpem.2018.8501001