| Zugriffsnummer | 41510 |
| Dokumenttyp | Zeitschriftenartikel |
| Peer Review | mit Peer Review |
| Sprache | Englisch |
| Titel | Nanoindentation of crystalline silicon pillars fabricated by soft UV nanoimprint lithography and cryogenic deep reactive ion etching |
| Autor(in); Institution |
Hamdana, Gerry; Institute of Semiconductor Technology, TU-Braunschweig, Braunschweig, GERMANY; Laboratory for Emerging Nanometrology (LENA), Braunschweig, GERMANY
Puranto, Prabowo; 5.1, Oberflächenmesstechnik, PTB-Braunschweig; Research Center for Physics, Indonesian Institute of Science, Banten, INDONESIA
Langfahl-Klabes, Jannick; 5.1, Oberflächenmesstechnik, PTB-Braunschweig
Li, Zhi; 5.1, Oberflächenmesstechnik, PTB-Braunschweig
Pohlenz, Frank; 5.2, Dimensionelle Nanometrologie, PTB-Braunschweig
Xu, Min; 5.1, Oberflächenmesstechnik, PTB-Braunschweig
Granz, Tony; Institute of Semiconductor Technology, TU-Braunschweig, Braunschweig, GERMANY; Laboratory for Emerging Nanometrology (LENA), Braunschweig, GERMANY
Bertke, Maik; Institute of Semiconductor Technology, TU-Braunschweig, Braunschweig, GERMANY; Laboratory for Emerging Nanometrology (LENA), Braunschweig, GERMANY
Wasitsto, Hutomo Suryo; Institute of Semiconductor Technology, TU-Braunschweig, Braunschweig, GERMANY; Laboratory for Emerging Nanometrology (LENA), Braunschweig, GERMANY
Brand, Uwe; 5.1, Oberflächenmesstechnik, PTB-Braunschweig
Peiner, Erwin; Institute of Semiconductor Technology, TU-Braunschweig, Braunschweig, GERMANY; Laboratory for Emerging Nanometrology (LENA), Braunschweig, GERMANY
|
| Quelle/Jahr | Sensors and Actuators A: 283 (2018), 65 - 78 |
| ISSN | 0924-4247 |
| DOI | |
| Verlag | Amsterdam: Elsevier |
| Freie Schlagworte | Nanoindentation ; Contact stiffness ; Nanoimprint lithograpy ; Silicon pillar ; Dry etching ; Cryogenic |
| Zusammenfassung | Nanomechanical properties of bulk and micro-pillared monocrystalline silicon are experimentally inves-tigated using nanoscale depth-sensing indentation technique. Silicon pillar arrays with different crystalorientations, i.e., Si<100>, Si<110>, and Si<111>, are prepared by means of a top-down approach con-sisting of nanoimprint lithography and cryogenic dry etching. A three-sided Berkovich tip used duringthe experiments has provided highly resolved load-depth-curves and imprinted hardness impressionson the silicon materials. Depending on the aspect ratio of the pillars, the axial stiffness of the objectsunder measurement has to be considered. Corrected values of the elastic modulus are determinedrevealing direct nanomechanical comparison between silicon bulk and pillar structures. In summary,enhanced comprehension of elastic-plastic-response occurred within micro-structured silicon materialsis shown, providing the potential to use silicon pillar arrays as fundamental material for accurate forcemeasurements |
| Themenbereich der Metrologie | Nanometrologie |
Zitierung
Hamdana, G., Puranto, P., Langfahl-Klabes, J., Li, Z., Pohlenz, F., Xu, M., Granz, T., Bertke, M., Wasitsto, H. S., Brand, U., & Peiner, E. (2018). Nanoindentation of crystalline silicon pillars fabricated by soft UV nanoimprint lithography and cryogenic deep reactive ion etching. Sensors and Actuators A, 283, 65–78. https://doi.org/10.1016/j.sna.2018.09.035