| Zugriffsnummer | 41366 |
| Dokumenttyp | Buchartikel |
| Peer Review | unbekannt |
| Sprache | Englisch |
| Titel | 2D NAND flash technology |
| Autor(in); Institution |
Beug, Marc Florian; 2.1, Gleichstrom und Niederfrequenz, PTB-Braunschweig
|
| Quelle/Jahr | Inside Solid State Drives (SSDs):(2018), 61 - 104 |
| Auflage | 2. Edition |
| Schriftenreihe | Springer series in advanced microelectronics: 37 |
| Herausgeber(in) |
Micheloni, Rino; Microsemi Corporation, Vimercate, ITALY
|
| ISBN | 978-981-13-0598-6 ; 978-981-13-0599-3 (PDF) |
| DOI | |
| Verlag | Singapore: Springer |
| Freie Schlagworte | Floating gate NAND ; Charge trapping cells ; Non-volatile memory ; Capacitive coupling model ; Program saturation ; Erase saturation ; Self-boosted program inhibit ; Program disturb ; Pass disturb ; Pass window ; Charge retention ; Program/erase cycling endurance ; Memory cell scaling ; Cell cross-coupling ; Random telegraph noise ; Optical lithography gap ; Double patterning ; Quadruple patterning ; CD variations ; 3D NAND geometry |
| Zusammenfassung | This chapter describes the basic operating principle and presents the major reliability and scaling limitations of floating gate NAND non volatile memory as used in SSD applications. It further discusses charge trapping memory cells as a potential replacement for floating gate cells in the NAND array and evaluates the potential of both memory cell types with regard to 3D NAND applications as will be described in the next chapter. |
| Themenbereich der Metrologie | Elektrizität und Magnetismus |