| Zugriffsnummer | 40385 |
| Dokumenttyp | Zeitschriftenartikel |
| Peer Review | mit Peer Review |
| Sprache | Englisch |
| Titel | Minimum resistance anisotropy of epitaxial graphene on SiC |
| Autor(in); Institution |
Momeni Pakdehi, Davood; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Aprojanz, Johannes; Leibniz Universität Hannover, Institut für Festkörperphysik, Hannover, GERMANY
Sinterhauf, Anna; Universität Göttingen, IV. Physikalisches Institut, Göttingen, GERMANY; International Universität Göttingen, Center for Advanced Studies of Energy Conversion (ICASEC), Göttingen, GERMANY
Pierz, Klaus; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Kruskopf, Mattias; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Hohls, Frank; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Tegenkamp, Christoph; Leibniz Universität Hannover, Institute of Solid State Physics, Hannover, GERMANY
Wenderoth, Martin; Georg-August-Universität Göttingen, IV. Physikalisches Institut, Göttingen, GERMANY
Ahlers, Franz Josef; 2.6, Elektrische Quantenmetrologie, PTB-Braunschweig
Schumacher, Hans Werner; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
|
| Quelle/Jahr | ACS Applied Materials and Interfaces: 10 (2018), 6, 6039 - 6045 |
| ISSN | 1944-8244 (PRINT) ; 1944-8252 (ONLINE) |
| DOI | |
| Verlag | Washington DC: American Chemical Society (ACS) |
| Freie Schlagworte | SiC epitaxial graphene ; isotropic conductance ; resistance anisotropy ; uniform growth ; SiC terrace steps ; bilayer-free graphene ; scanning tunneling potentiometry |
| Zusammenfassung | We report on electronic transport measurements in rotational square probe con figuration in combination with scanning tunneling potentiometry of epitaxial graphene monolayers which were fabricated by polymer-assisted sublimation growth on SiC substrates. The absence of bilayer graphene on the ultralow step edges of below 0.75 nm scrutinized by atomic force microscopy and scanning tunneling microscopy result in a not yet observed resistance isotropy of graphene on 4H- and 6H-SiC(0001) substrates as low as 2%. We combine microscopic electronic properties with nanoscale transport experiments and thereby disentangle the underlying microscopic scattering mechanism to explain the remaining resistance anisotropy. Eventually, this can be entirely attributed to the resistance and the number of substrate steps which induce local scattering. Thereby, our data represent the ultimate limit for resistance isotropy of epitaxial graphene on SiC for the given miscut of the substrate. |
| Kostenfreier Zugang | Open Access Hybrid |
| Rechteinformation | ACS AuthorChoice - This is an open access article published under an ACS AuthorChoice License, which permits copying and redistribution of the article or any adaptations for non-commercial purposes. |
Zitierung
Momeni Pakdehi, D., Aprojanz, J., Sinterhauf, A., Pierz, K., Kruskopf, M., Hohls, F., Tegenkamp, C., Wenderoth, M., Ahlers, F. J., & Schumacher, H. W. (2018). Minimum resistance anisotropy of epitaxial graphene on SiC. ACS Applied Materials and Interfaces, 10(6), 6039–6045. https://doi.org/10.1021/acsami.7b18641