| Zugriffsnummer | 40376 |
| Dokumenttyp | Konferenzartikel in Zeitschrift |
| Peer Review | mit Peer Review |
| Sprache | Englisch |
| Titel | Charge carrier dynamics in Ga1-xMnx As studied by resistance noise spectroscopy |
| Autor(in); Institution |
Lonsky, Martin; Goethe-University Frankfurt, Institute of Physics, Frankfurt (M), GERMANY
Teschabai-Oglu, Jan; Goethe-University Frankfurt, Institute of Physics, Frankfurt (M), GERMANY
Pierz, Klaus; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Sievers, Sibylle; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Schumacher, Hans Werner; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Yuan, Ye; Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, GERMANY
Böttger, Roman; Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, GERMANY
Zhou, Shengqiang; Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden, GERMANY
Müller, Jens; Goethe-University Frankfurt, Institute of Physics, Frankfurt (M), GERMANY
|
| Quelle/Jahr | Acta Physica Polonica A: 133 (2018), 3, 520 - 522 |
| ISSN | 0587-4246 (PRINT) ; 1898-794X (ONLINE) |
| DOI | |
| URL | |
| Verlag | Warsaw: Polish Acad. of Sciences, Institute of Physics |
| Konferenzangaben | The European Conference: Physics of Magnetism 2017 (PM’17), Poznan, 26-30, June, 2017, Poland |
| Klassifikationscode | PACS: 75.50.Pp ; PACS: 73.50.Td ; PACS: 73.50.-h ; PACS: 73.61.-r ; PACS: 64.60.ah ; PACS: 61.72.-y |
| Freie Schlagworte | magnetic semiconductor ; GaMnAs ; noise spectroscopy ; charge carrier dynamics |
| Zusammenfassung | We report on electronic transport measurements of the magnetic semiconductor Ga1-xMnxAs, whereby the defect landscape in various metallic thin films (x = 6%) was tuned by He-ion irradiation. Changes in the Distribution of activation energies, which strongly determine the low-frequency 1/ƒ-type resistance noise characteristics, were observed after irradiation and can be explained by deep-level traps residing in the As sublattice. Various other kinds of crystalline defects such as, for instance, Mn interstitials, which possibly form nanoscale magnetic clusters with a fluctuating spin orientation, also contribute to the 1/ƒ noise and can give rise to random telegraph signals, which were observed in films with x = 7%. In addition, we neither find evidence for a magnetic polaron percolation nor any features in the noise near the Curie temperature. |
Zitierung
Lonsky, M., Teschabai-Oglu, J., Pierz, K., Sievers, S., Schumacher, H. W., Yuan, Y., Böttger, R., Zhou, S., & Müller, J. (2018). Charge carrier dynamics in Ga1-xMnx As studied by resistance noise spectroscopy. Acta Physica Polonica A, 133(3), 520–522. https://doi.org/10.12693/aphyspola.133.520