| Zugriffsnummer | 39406 |
| Dokumenttyp | Konferenzartikel in Zeitschrift |
| Peer Review | mit Peer Review |
| Sprache | Englisch |
| Titel | Reducing extreme ultraviolet mask three-dimensional effects by alternative metal absorbers |
| Autor(in); Institution |
Philipsen, V.; IMEC, Advanced Patterning Department, Leuven, BELGIUM
Luong, K.V.; IMEC, Leuven, BELGIUM; KULeuven, Department of Materials Engineering, Leuven, BELGIUM
Souriau, L.; IMEC, Leuven, BELGIUM
Erdmann, A.; Fraunhofer IISB, Computational Lithography and Optics, Erlangen, GERMANY
Xu, D.; Fraunhofer IISB, Computational Lithography and Optics, Erlangen, GERMANY
Evanschitzky, P.; Fraunhofer IISB, Computational Lithography and Optics, Erlangen, GERMANY
van de Kruijs, R.W.E.; University of Twente, Industrial Focus Group XUV Optics, Enschede, THE NETHERLANDS
Edrisi, A.; University of Twente, Industrial Focus Group XUV Optics, Enschede, THE NETHERLANDS
Scholze, Frank; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Laubis, Christian; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Irmscher, M.; IMS CHIPS, Nanopatterning Business Unit, Stuttgart, GERMANY
Naasz, S.; IMS CHIPS, Nanopatterning Business Unit, Stuttgart, GERMANY
Reuter, C.; IMS CHIPS, Nanopatterning Business Unit, Stuttgart, GERMANY
Hendrickx, E.; IMEC, Advanced Patterning Department, Leuven, BELGIUM
|
| Quelle/Jahr | Journal of Micro/Nanolithography, MEMS and MOEMS: 16 (2017), 4, 041002-1 - 041002-13 |
| ISSN | 1932-5150 (PRINT) ; 1932-5134 (ONLINE) |
| DOI | |
| Verlag | Bellingham, Wash.: SPIE |
| Konferenzangaben | 16th Meeting High Energy Astrophysics Division, Sun Valley, Idaho, 20-24 August 2017, USA |
| Freie Schlagworte | extreme ultraviolet mask absorber ; mask three-dimensional effects ; absorber characterization ; rigorous mask three-dimensional lithography simulation |
| Zusammenfassung | Over the recent years, extreme ultraviolet (EUV) lithography has demonstrated the patterning of evershrinking feature sizes (enabling the N7 technology node and below), whereas the EUV mask has remained unaltered, using a 70-nm tantalum (Ta)-based absorber. This has led to experimentally observed mask three-dimensional (M3D) effects at the wafer level, which are induced by the interaction between the oblique incident EUV light and the patterned absorber with typical thickness values on the order of several wavelengths. We exploit the optical properties of the absorber material of the EUV mask as an M3D mitigation strategy. Using rigorous lithographic simulations, we screen potential single-element absorber materials for their optical properties and optimal thickness for minimum best focus variation through pitch at the wafer level. In addition, the M3D mitigation by absorber material is evaluated by process window comparison of foundry N5-specific logic clips. To validate the rigorous simulation predictions and test the processing feasibility of the alternative absorber materials, we have selected the candidate single elements nickel and cobalt for an experimental evaluation on wafer substrates. We present the film characterization as well as the first patterning tests of these single-element candidate absorber materials. |
Zitierung
Philipsen, V., Luong, K., Souriau, L., Erdmann, A., Xu, D., Evanschitzky, P., van de Kruijs, R., Edrisi, A., Scholze, F., Laubis, C., Irmscher, M., Naasz, S., Reuter, C., & Hendrickx, E. (2017). Reducing extreme ultraviolet mask three-dimensional effects by alternative metal absorbers. Journal of Micro/Nanolithography, MEMS and MOEMS, 16(4), 041002-1–041002-13. https://doi.org/10.1117/1jmm.16.4.041002