| Zugriffsnummer | 39054 |
| Dokumenttyp | Konferenzartikel |
| Sprache | Englisch |
| Titel | Dimensional optical metrology of deep subwavelength grating structures |
| Autor(in); Institution |
Bodermann, Bernd; 4.2, Bild- und Wellenoptik, PTB-Braunschweig
Diener, Alexander; 4.2, Bild- und Wellenoptik, PTB-Braunschweig
Wurm, Matthias; 4.2, Bild- und Wellenoptik, PTB-Braunschweig
|
| Quelle/Jahr | Proceedings of the 17th International Conference of the European Society for Precision Engineering and Nanotechnology:(2017), 339 - 340 |
| Herausgeber(in) |
Billington, D.
|
| ISBN | 978-0-9957751-0-7 |
| Verlag | Bedford: Euspen |
| Konferenzangaben | euspen's 17th International Conference & Exhibition, Hannover, 29, May - 02, June, 2017, Germany |
| Freie Schlagworte | optical metrology ; nanotechnologies ; scatterometry ; gratings ; hybrid metrology |
| Zusammenfassung | We present optical measurements of the size and geometry of grating structures with linewidths down to 25 nm on silicon wafers by means of goniometric scatterometry and spectroscopic Mueller ellipsometry. With respect to the applied inspection wavelengths the structure sizes are in the deep subwavelength regime. We present both individual evaluations of the measured data as well as a combined analysis to reconstruct the cross-section profile. By this hybrid analysis method based on the Bayes approach parameter correlations can be reduced significantly compared to single measurement analyses, and lower measurement uncertainties are achieved. Based on a covariance analysis we derive the statistical measurement uncertainty of the whole structure profile. This includes but is far beyond state-of-the-art uncertainty estimations for dedicated parameters such as structure width or height. For these parameters we typically estimate the resulting uncertainties to be between 1 to 5 nm. Finally, by numerical simulations we have tested the limits of our approaches for the characterisation of even much smaller grating structures. As a result we have demonstrated the extendibility of our methods down to well below 10 nm and with it we have shown it’s suitability even for current and future technology nodes in IC manufacturing technologies. |
