| Zugriffsnummer | 39052 |
| Dokumenttyp | Konferenzartikel |
| Sprache | Englisch |
| Titel | OCD metrology for advanced lithography [eingeladener Vortrag] |
| Autor(in); Institution |
Bodermann, Bernd; 4.2, Bild- und Wellenoptik, PTB-Braunschweig
Diener, Alexander; 4.2, Bild- und Wellenoptik, PTB-Braunschweig
Scholze, Frank; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Heidenreich, Sebastian; 8.4, Mathematische Modellierung und Datenanalyse, PTB-Berlin
Soltwisch, Victor; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
Wurm, Matthias; 4.2, Bild- und Wellenoptik, PTB-Braunschweig
|
| Quelle/Jahr | Frontiers of Characterization and Metrology for Nanoelectronics 2017:(2017), 70 - 72 |
| Herausgeber(in) |
Secula, Eric M.
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| URL | |
| Verlag | Gaithersburg: NIST |
| Konferenzangaben | Frontiers of Characterization and Metrology for Nanoelectronics 2017, Monterey, 21-23, March, 2017, USA |
| Freie Schlagworte | Scatterometry ; CD metrology ; traceability ; reference standards ; beyond CMOS ; Mueller ellipsometry ; X-ray scatterometry |
| Zusammenfassung | Scatterometry is widely used for dimensional metrology in nanoelectronic manufacturing, here often referred to as optical CD (OCD) metrology. However, currently applications are limited to relative measurements for process development and process control due to the lack of traceability. In addition, with current and future trends in advanced lithography substantial new challenges arise and have to be addressed. These challenges include e.g. in-die measurements, multi-parameter measurements in complex applications such as high aspect ratio (HAR) features or FinFET structures, 3D metrology or stochastic structure parameters (roughness), to name but a few. At PTB we develop and apply a broad variety of scatterometry methods from the NIR down to the EUV and X-Ray spectral regime for CD metrology on photo masks and structured wafers. Here we present an overview about our methods and approaches including recent and future developments. In particular, traceability and tool matching for different OCD techniques is an issue as well as matching with other methods such as CD-SEM and CD-AFM. A popular and promising approach to improve the measurement uniqueness and uncertainty and to address the mentioned future challenges is hybrid metrology, combining either different scatterometry methods or OCD and microscopy metrology tools. Finally, approaching structure sizes of about 10 nm or less, the quest for the ultimate limits of optical scatterometry arises. With it the perspectives of OCD and related methods with respect to the emerging metrology issues in the semiconductor industry have to be considered and evaluated thoroughly. Available online free of charge |
