| Zugriffsnummer | 38947 |
| Dokumenttyp | Zeitschriftenartikel |
| Sprache | Englisch |
| Titel | Study of 3D-growth conditions for selective area MOVPE of high aspect ratio GaN fins with non-polar vertical sidewalls |
| Autor(in); Institution |
Hartmann, Jana; TU Braunschweig, Institute of Semiconductor Technology and Laboratory for Emerging Nanometrology epitaxy competence center ec2, Braunschweig, GERMANY
Steib, Frederik; TU Braunschweig, Institute of Semiconductor Technology and Laboratory for Emerging Nanometrology epitaxy competence center ec2, Braunschweig, GERMANY
Zhou, Hao; TU Braunschweig, Institute of Semiconductor Technology and Laboratory for Emerging Nanometrology epitaxy competence center ec2, Braunschweig, GERMANY
Ledig, Johannes; 4.1, Photometrie und angewandte Radiometrie, PTB-Braunschweig; TU Braunschweig, Institute of Semiconductor Technology and Laboratory for Emerging Nanometrology epitaxy competence center ec2, Braunschweig, GERMANY
Nicolai, Lars; Paul-Drude-Institut für Festkörperelektronik, Berlin, GERMANY
Fündling, Sönke; TU Braunschweig, Institute of Semiconductor Technology and Laboratory for Emerging Nanometrology epitaxy competence center ec2, Braunschweig, GERMANY
Schimpke, Tilman; OSRAM Opto Semiconductors GmbH, Regensburg, GERMANY
Avramescu, Adrian; OSRAM Opto Semiconductors GmbH, Regensburg, GERMANY
Varghese, Tansen; OSRAM Opto Semiconductors GmbH, Regensburg, GERMANY
Trampert, Achim; Paul-Drude-Institut für Festkörperelektronik, Berlin, GERMANY
Straßburg, Martin; OSRAM Opto Semiconductors GmbH, Regensburg, GERMANY
Lugauer, Hans-Jürgen; OSRAM Opto Semiconductors GmbH, Regensburg, GERMANY
Wehmann, Hergo-Heinrich; TU Braunschweig, Institute of Semiconductor Technology and Laboratory for Emerging Nanometrology epitaxy competence center ec2, Braunschweig, GERMANY
Waag, Andreas; TU Braunschweig, Institute of Semiconductor Technology and Laboratory for Emerging Nanometrology epitaxy competence center ec2, Braunschweig, GERMANY
|
| Quelle/Jahr | Journal of Crystal Growth: 476 (2017), 90 - 98 |
| ISSN | 0022-0248 |
| DOI | |
| Verlag | Amsterdam: Elsevier |
| Freie Schlagworte | Crystal morphology ; Metalorganic vapor phase epitaxy ; Gallium compounds ; Nitrides ; Light emitting diodes |
| Zusammenfassung | GaN fins are 3D architectures elongated in one direction parallel to the substrate surface. They have the geometry of walls with a large height to width ratio as well as small footprints. When appropriate symmetry directions of the GaN buffer are used, the sidewalls are formed by non-polar \{11-20\} planes, making the fins particularly suitable for many device applications like LEDs, FETs, lasers, sensors or waveguides. The influence of growth parameters like temperature, pressure, V/III ratio and total precursor flow on the fin structures is analyzed. Based on these results, a 2-temperature-step-growth was developed, leading to fins with smooth side and top facets, fast vertical growth rates and good homogeneity along their length as well as over different mask patterns. For the core-shell growth of fin LED heterostructures, the 2-temperature-step-growth shows much smoother sidewalls and less crystal defects in the InGaN QW and p-GaN shell compared to structures with cores grown in just one step. Electroluminescence spectra of the 2-temperature-step-grown fin LED are demonstrated. |
Zitierung
Hartmann, J., Steib, F., Zhou, H., Ledig, J., Nicolai, L., Fündling, S., Schimpke, T., Avramescu, A., Varghese, T., Trampert, A., Straßburg, M., Lugauer, H.-J., Wehmann, H.-H., & Waag, A. (2017). Study of 3D-growth conditions for selective area MOVPE of high aspect ratio GaN fins with non-polar vertical sidewalls. Journal of Crystal Growth, 476, 90–98. https://doi.org/10.1016/j.jcrysgro.2017.08.021