| Zugriffsnummer | 38129 |
| Dokumenttyp | Konferenzartikel |
| Sprache | Englisch |
| Titel | CuGeMn, a new material for high precision cryo-resistors |
| Autor(in); Institution |
Warnecke, Peter; 2.12, Widerstandseinheit, PTB-Braunschweig
Braun, Erich; 2.1, Elektrische Einheiten, PTB-Braunschweig
|
| Quelle/Jahr | CPEM '90 digest ; June 11 - 14 juin 1990, Ottawa, Canada:(1990), 292 - 293 |
| Herausgeber(in) |
Hanes, Gary R.
|
| Verlag | New York, NY: IEEE |
| Konferenzangaben | Conference on Precision Electromagnetic Measurements (CPEM) 1990, Ottawa, 11-14, June, 1990, Canada |
| Zusammenfassung | The electrical resistance of CuGeMn alloys was measured as a function of temperature. It shows maxima at temperatures between 1,5 K and 9.1 K. Since the temperature coefficient at the maxima is zero and due to the high value of resistivity these alloys are very suitable for the construction of cryo-resistors, which are operated in liquid helium and can be used to improve quantum Hall measurement systems. |
