| Zugriffsnummer | 37632 |
| Dokumenttyp | Konferenzartikel in Zeitschrift |
| Sprache | Englisch |
| Titel | Application of ellipsometry for the accurate oxide layer measurement on silicon spheres |
| Autor(in); Institution |
Busch, Ingo; 5.1, Oberflächenmesstechnik, PTB-Braunschweig
Liu, Wende; National Institute of Metrology (NIM), Beijing, CHINA
Chen, Chi; National Institute of Metrology (NIM), Beijing, CHINA
Luo, Zhiyong; National Institute of Metrology (NIM), Beijing, CHINA
Koenders, Ludger; 5.1, Oberflächenmesstechnik, PTB-Braunschweig
|
| Quelle/Jahr | Applied Surface Science: 421 (2017), Part B, 624 - 629 |
| ISSN | 0169-4332 |
| DOI | |
| Verlag | Amsterdam: Elsevier |
| Konferenzangaben | 7th International Conference on Spectroscopic Ellipsometry, Berlin, 06-10, June, 2016, Germany |
| Freie Schlagworte | Spectroscopic Ellipsometry ; Surface Layer ; Silicon Sphere ; Ultrathin Silicon Oxide Film ; Metrology ; Uncertainty |
| Zusammenfassung | As one of the reference measurement methods for future realization of the unit of mass (kilogram) and Avogadro constant NA, the silicon (Si) sphere method employs the ellipsometry for the measurement of the thickness of the ultrathin (<10 nm) silicon oxide layer (OL) with high accuracy. Depending on the reference standard used, the application of ellipsometer is generally divided into the internal and external calibrations, respectively. For the former, the Si sphere itself is used as the reference standard to directly compare the ellipsometric and another independent high-accuracy thickness measurement method, thus achieving an uncertainty of u(dOL) ≈ 0.1 nm. For the latter, the uncertainty is enlarged because the transfer standards of wafer samples are essentially no the same as the Si sphere. Although not on the similar level of uncertainty, the external calibration method provides more practical approach for dissemination and maintenance of the new mass unit. The details both methods are extensively studied as practical guidance. |
