| Zugriffsnummer | 37477 |
| Dokumenttyp | Zeitschriftenartikel |
| Peer Review | ohne Peer Review |
| Sprache | Englisch |
| Titel | Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC |
| Autor(in); Institution |
Kruskopf, Mattias; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Momeni Pakdehi, Davood; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Pierz, Klaus; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Wundrack, Stefan; 3.1, Metrologie in der Chemie, PTB-Braunschweig
Stosch, Rainer; 3.1, Metrologie in der Chemie, PTB-Braunschweig
Dziomba, Thorsten; 5.2, Dimensionelle Nanometrologie, PTB-Braunschweig
Götz, Martin; 2.6, Elektrische Quantenmetrologie, PTB-Braunschweig
Baringhaus, Jens; Leibniz Universität Hannover, Institute of Solid State Physics, Hannover, GERMANY
Aprojanz, Johannes; Leibniz Universität Hannover, Institute of Solid State Physics, Hannover, GERMANY
Tegenkamp, Christoph; Leibniz Universität Hannover, Institute of Solid State Physics, Hannover, GERMANY
Lidzba, Jakob; Technische Universität Chemnitz, Institute of Physics, Chemnitz, GERMANY
Seyller, Thomas; Technische Universität Chemnitz, Institute of Physics, Chemnitz, GERMANY
Hohls, Frank; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Ahlers, Franz Josef; 2.6, Elektrische Quantenmetrologie, PTB-Braunschweig
Schumacher, Hans Werner; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
|
| Quelle/Jahr | 2D Materials: 3 (2016), 4, 1 - 9 |
| Artikelnummer | 041002 |
| Availability | [online only] |
| ISSN | 2053-1583 |
| DOI | |
| Verlag | Bristol: IOP Publ. |
| Freie Schlagworte | epitaxial graphene on SiC ; quantum Hall effect ; buffer layer ; bilayer free ; large scale ; suppression of step bunching ; carbon |
| Zusammenfassung | We present a new fabrication method for epitaxial graphene on SiC which enables the growth of ultrasmooth defect- and bilayer-free graphene sheets with an unprecedented reproducibility, a necessary prerequisite for wafer-scale fabrication of high quality graphene-based electronic devices. The inherent but unfavorable formation of high SiC surface terrace steps during high temperature sublimation growth is suppressed by rapid formation of the graphene buffer layer which stabilizes the SiC surface. The enhanced nucleation is enforced by decomposition of deposited polymer adsorbate which acts as a carbon source. Unique to this method are the conservation of mainly 0.25 and 0.5 nm high surface steps and the formation of bilayer-free graphene on an area only limited by the size of the sample. This makes the polymer-assisted sublimation growth technique a promising method for commercial wafer scale epitaxial graphene fabrication. The extraordinary electronic quality is evidenced by quantum resistance metrology at 4.2 Kshowing ultra-high precision and high electron mobility onmmscale devices comparable to state-of-the-art graphene. |
| Kostenfreier Zugang | Open Access Hybrid |
| Rechteinformation | CC BY 3.0 ; Creative Commons Attribution 3.0 License |
Zitierung
Kruskopf, M., Momeni Pakdehi, D., Pierz, K., Wundrack, S., Stosch, R., Dziomba, T., Götz, M., Baringhaus, J., Aprojanz, J., Tegenkamp, C., Lidzba, J., Seyller, T., Hohls, F., Ahlers, F. J., & Schumacher, H. W. (2016). Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC. 2D Materials, 3(4), 1–9. https://doi.org/10.1088/2053-1583/3/4/041002