| Zugriffsnummer | 36066 |
| Dokumenttyp | Zeitschriftenartikel |
| Peer Review | unbekannt |
| Sprache | Englisch |
| Titel | Dopant-controlled single-electron pumping through a metallic island |
| Autor(in); Institution |
Wenz, Tobias; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Hohls, Frank; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Jehl, Xavier; Université Grenoble Alpes and INAC-SPSMS, Grenoble, FRANCE
Sanquer, Marc; Université Grenoble Alpes and CEA-INAC-PHELIQS, Grenoble, FRANCE
Barraud, Sylvain; Université Grenoble Alpes and CEA-Leti-Minatec, Grenoble, FRANCE
Klochan, Jevgeny; University of Latvia, Faculty of Physics and Mathematics, Riga, LATVIA
Barinovs, Girts; University of Latvia, Faculty of Physics and Mathematics, Riga, LATVIA
Kashcheyevs, Vyacheslavs; University of Latvia, Faculty of Physics and Mathematics, Riga, LATVIA
|
| Quelle/Jahr | Applied Physics Letters: 108 (2016), 21, 213107-1 - 213107-4 |
| ISSN | 0003-6951 (PRINT) ; 1077-3118 (ONLINE) |
| DOI | |
| Verlag | Melville, NY: AIP Publishing |
| Freie Schlagworte | single electron pump ; single dopant ; quantum dot |
| Zusammenfassung | We investigate a hybrid metallic island/single dopant electron pump based on fully depleted silicon-on-insulator technology. Electron transfer between the central metallic island and the leads is controlled by resonant tunneling through single phosphorus dopants in the barriers. Top gates above the barriers are used to control the resonance conditions. Applying radio frequency signals to the gates, non-adiabatic quantized electron pumping is achieved. A simple deterministic model is presented and confirmed by comparing measurements with simulations. |
