| Zugriffsnummer | 35403 |
| Dokumenttyp | Konferenzartikel |
| Peer Review | unbekannt |
| Sprache | Englisch |
| Titel | Terahertz generation with an 830 nm all semiconductor femtosecond laser system |
| Autor(in); Institution |
Jördens, C.; TU Braunschweig, Institut für Hochfrequenztechnik, GERMANY
Schlauch, T.; Ruhr-Universität Bochum, Lehrstuhl für Photonik und THz-Technologie, GERMANY
Li, M.; Ruhr-Universität Bochum, Lehrstuhl für Photonik und THz-Technologie, GERMANY
Hofmann, M. R.; Ruhr-Universität Bochum, Lehrstuhl für Photonik und THz-Technologie, GERMANY
Bieler, Mark; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Koch, M.; TU Braunschweig, Institut für Hochfrequenztechnik, GERMANY
|
| Quelle/Jahr | Terahertz for life : IRMMW-THz 2008, 33rd International Conference on Infrared, Millimeter, and Terahertz Waves:(2008), 2 S. |
| Availability | [USB-Stick] ; file name: Proc_Semiconductor_laser_PID610978.pdf |
| ISBN | 978-1-4244-2120-6 |
| DOI | |
| URL | |
| Verlag | Pasadena: California Inst. of Technology |
| Konferenzangaben | Joint 33rd International Conference on Infrared and Millimeter Waves and 16th IEEE International Conference on THz Electronics (IRMMW-THz 2008), Pasadena, Calif., 15-19, September, 2008, USA |
| Freie Schlagworte | Semiconductor lasers ; Laser modes ; Time domain analysis ; Ultrafast optics ; Fiber lasers ; Bandwidth ; Measurement by laser beam |
| Zusammenfassung | We present a THz time-domain spectrometer based on an 830 nm all semiconductor femtosecond laser system. Optical pulses with durations of less than 600 fs are used to gate standard LT-GaAs antennas. We achieve a signal to noise ratio of more than 40 dB in intensity and a bandwidth of 1.4 THz. Simulations based on the Drude-Lorentz model show a good agreement with the measured THz signals. Spectroscopic data on polymeric compounds and first THz images taken with our system will be presented as well. |
Zitierung
Jördens, C., Schlauch, T., Li, M., Hofmann, M. R., Bieler, M., & Koch, M. (2008). Terahertz generation with an 830 nm all semiconductor femtosecond laser system. Joint 33rd International Conference on Infrared and Millimeter Waves and 16th IEEE International Conference on THz Electronics (IRMMW-THz 2008), Pasadena, Calif., 15-19, September, 2008, USA. https://doi.org/10.1109/icimw.2008.4665827