| Zugriffsnummer | 35236 |
| Dokumenttyp | Konferenzartikel |
| Sprache | Englisch |
| Titel | Photomask linewidth comparison by PTB and NIST |
| Autor(in); Institution |
Bergmann, Detlef; 4.2, Bild- und Wellenoptik, PTB-Braunschweig
Bodermann, Bernd; 4.2, Bild- und Wellenoptik, PTB-Braunschweig
Bosse, Harald; 5, Fertigungsmesstechnik, PTB-Braunschweig
Buhr, Egbert; 4.2, Bild- und Wellenoptik, PTB-Braunschweig
Dai, Gaoliang; 5.2, Dimensionelle Nanometrologie, PTB-Braunschweig
Dixson, Ronald G.; National Institute of Standards and Technology (NIST), Gaithersburg, MD, USA
Häßler-Grohne, Wolfgang; 5.2, Dimensionelle Nanometrologie, PTB-Braunschweig
Hahm, Kai; 5.2, Dimensionelle Nanometrologie, PTB-Braunschweig
Wurm, Matthias; 4.2, Bild- und Wellenoptik, PTB-Braunschweig
|
| Quelle/Jahr | Scanning Microscopies 2015:(2015), 96360S-1 - 96360S -14 |
| Schriftenreihe | Proceedings of SPIE: 9636 |
| Herausgeber(in) |
Postek, Michael T.
|
| ISBN | 978-1-62841-846-0 |
| DOI | |
| Verlag | Bellingham, Wash.: SPIE |
| Konferenzangaben | SPIE Conference on Scanning Microscopies, Monterey, Calif., 29, September - 01, October, 2015, USA |
| Freie Schlagworte | linewidth ; photomask ; uncertainty components ; MRA ; CD metrology ; Nano1 ; international comparison |
| Zusammenfassung | We report the initial results of a recent bilateral comparison of linewidth or critical dimension (CD) calibrations on photomask line features between two national metrology institutes (NMIs): the National Institute of Standards and Technology (NIST) in the United States and the Physikalisch-Technische Bundesanstalt (PTB) in Germany. For the comparison, a chrome on glass (CoG) photomask was used which has a layout of line features down to 100 nm nominal size. Different measurement methods were used at both institutes. These included: critical dimension atomic force microscopy (CD-AFM), CD scanning electron microscopy (CD-SEM) and ultraviolet (UV) transmission optical microscopy. The measurands are CD at 50 % height of the features as well as sidewall angle and line width roughness (LWR) of the features. On the isolated opaque features, we found agreement of the CD measurements at the 3 nm to 5 nm level on most features - usually within the combined expanded uncertainties of the measurements. |
Zitierung
Bergmann, D., Bodermann, B., Bosse, H., Buhr, E., Dai, G., Dixson, R. G., Häßler-Grohne, W., Hahm, K., & Wurm, M. (2015). Photomask linewidth comparison by PTB and NIST. SPIE Conference on Scanning Microscopies, Monterey, Calif., 29, September - 01, October, 2015, USA. https://doi.org/10.1117/12.2199453