| Zugriffsnummer | 35158 |
| Dokumenttyp | Konferenzartikel |
| Sprache | Englisch |
| Titel | Quantum hall resistances with different rational fractions of h/e² realized by controlling the current distribution via Schottky gates |
| Autor(in); Institution |
Blöcker, Martin; 2.41, Halbleiterstrukturen, PTB-Braunschweig
Nachtwei, G.; Max-Planck-Institut für Festkörperforschung, Stuttgart, GERMANY
Ahlers, Franz Josef; 2.41, Halbleiterstrukturen, PTB-Braunschweig
Bliek, Leendert; 2.2, Hochfrequenz und Magnetismus, PTB-Braunschweig
|
| Quelle/Jahr | High magnetic fields in the physics of semiconductors II: 1 (1997), 215 - 218 |
| Herausgeber(in) |
Landwehr, G.; Universität Würzburg, Physikalisches Institut, Würzburg, GERMANY
|
| ISBN | 981-02-3988-0 |
| Verlag | Singapore [u.a.]: World Scientific |
| Konferenzangaben | High Magnetic Fields in the Physics of Semiconductors II, 12th international conference, Würzburg, 29, July - 2, August, 1996, Germany |
Zitierung
Blöcker, M., Nachtwei, G., Ahlers, F. J., & Bliek, L. (1997). Quantum hall resistances with different rational fractions of h/e² realized by controlling the current distribution via Schottky gates. High Magnetic Fields in the Physics of Semiconductors II, 12th international conference, Würzburg, 29, July - 2, August, 1996, Germany.