| Zugriffsnummer | 35028 |
| Dokumenttyp | Konferenzartikel |
| Peer Review | unbekannt |
| Sprache | Englisch |
| Titel | Backside illuminated CMOS image sensors for extreme ultraviolet applications |
| Autor(in); Institution |
Rao, P.R.; Department of Micro-Electronics & Computer Engineering, Delft University of Technology, Delft, THE NETHERLANDS
Nihtianov, S.; Department of Micro-Electronics & Computer Engineering, Delft University of Technology, Delft, THE NETHERLANDS
Laubis, Christian; 7.1, Radiometrie mit Synchrotronstrahlung, PTB-Berlin
|
| Quelle/Jahr | 2014 IEEE sensors (SENSORS 2014): Valencia, Spain, 2 - 5 November 2014 ; [The 13th IEEE Sensors Conference; proceedings]: 3 (2014), 1660 - 1663 |
| ISBN | 978-1-4799-0162-3 |
| DOI | |
| Verlag | Piscataway, NJ: IEEE |
| Konferenzangaben | IEEE Sensors 2014, Valencia, 2-5 Nov. 2014, Spain |
| Zusammenfassung | In this work, we report the performance of 4-transistor backside-illuminated CMOS image sensors (4T BSI-CIS) in the extreme ultraviolet (EUV) range. Both, bulk thinned as well as silicon-on-insulator (SOI) image sensors have been characterized. The sensors have been backside passivated by ion-implantation and laser annealing. It is found that the sensors exhibit sensitivity that is close to the theoretical maximum in the targeted EUV range, with a peak quantum yield at 13.5 nm of more than 20 electrons per photon. The sensitivity degradation of these sensors to a total exposure level of 0.96 J/cm2 is found to be minimal: in the 1 % - 6 % range. |
