Zugriffsnummer 34971
Dokumenttyp Zeitschriftenartikel
Peer Review unbekannt
Sprache Englisch
Titel Lissajous rocking ratchet: Realization in a semiconductor quantum dot
Autor(in); Institution
Platonov, Sergey; LMU-Munich, Center for NanoScience and Fakultät für Physik, München, GERMANY
Kästner, Bernd; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Schumacher, Hans Werner; 2.5, Halbleiterphysik und Magnetismus, PTB-Braunschweig
Kohler, Sigmund; Instituto de Ciencia de Materiales de Madrid, CSIC, Madrid, SPAIN
Ludwig, Stefan; LMU-Munich, Center for NanoScience and Fakultät für Physik, München, GERMANY
Quelle/Jahr Physical Review Letters: 115 (2015), 10, 106801-1 - 106801-5
ISSN 0031-9007 (PRINT) ; 1079-7114 (ONLINE)
DOI
URL
Verlag Ridge, NY: American Physical Society
Klassifikationscode PACS: 73.63.Kv ; PACS: 05.60.-k ; PACS: 85.35.Gv
Zusammenfassung Breaking time-reversal symmetry (TRS) in the absence of a net bias can give rise to directed steady-state nonequilibrium transport phenomena such as ratchet effects. Here we present, theoretically and experimentally, the concept of a Lissajous rocking ratchet based on breaking TRS. Our system is a semiconductor quantum dot with periodically modulated dot-lead tunnel barriers. Broken TRS gives rise to single electron tunneling current. Its direction is fully controlled by exploring frequency and phase relations between the two barrier modulations. The concept of Lissajous ratchets can be realized in a large variety of different systems, including nanoelectrical, nanoelectromechanical, or superconducting circuits. It promises applications based on a detailed on-chip comparison of radio-frequency signals.

Zitierung

Platonov, S., Kästner, B., Schumacher, H. W., Kohler, S., & Ludwig, S. (2015). Lissajous rocking ratchet: Realization in a semiconductor quantum dot. Physical Review Letters, 115(10), 106801-1–106801-5. https://doi.org/10.1103/physrevlett.115.106801

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